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1.发明申请SILICON SUBSTRATE SUITABLE FOR USE WITH AN RF COMPONENT, AND AN RF COMPONENT FORMED ON SUCH A SILICON SUBSTRATE 审中-公开适用于RF组件的硅基板和在这种硅基板上形成的RF组件公开(公告)号：US20150170911A1
公开(公告)日：2015-06-18
申请号：US14108035
申请日：2013-12-16
Applicant: ANALOG DEVICES TECHNOLOGY
Inventor： Paul Martin Lambkin , Padraig L. Fitzgerald , Bernard Patrick Stenson , Raymond C. Goggin , Seamus A. Lynch , William A. Lane
IPC: H01L21/02
CPC classification number: H01L21/02524 , H01H59/0009 , H01H2059/0018 , H01L21/02002 , H01L21/02373 , H01L21/322
Abstract: A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.
Abstract translation: 提供硅衬底，其可以通过使用由Czochralski工艺形成的硅层并且具有沉积在硅层上的载流子寿命消除层，更便宜地形成RF部件。
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2.发明申请INSULATING LOW SIGNAL LOSS SUBSTRATE, INTEGRATED CIRCUITS INCLUDING A NON-SILICON SUBSTRATE AND METHODS OF MANUFACTURE OF INTEGRATED CIRCUITS 审中-公开绝缘低信号损耗基板，包含非硅基板的集成电路和集成电路的制造方法公开(公告)号：US20140240944A1
公开(公告)日：2014-08-28
申请号：US13776545
申请日：2013-02-25
Applicant: ANALOG DEVICES TECHNOLOGY
Inventor： Bernard P. Stenson , Michael Morrissey , Seamus A. Lynch
IPC: B81B7/00
CPC classification number: H01L28/00 , H01L27/016 , H01L28/10 , H01L28/20 , H01L28/60
Abstract: A microelectronic circuit having at least one component adjacent a carrier which is not a semiconductor or sapphire.
Abstract translation: 微电子电路具有与不是半导体或蓝宝石的载体相邻的至少一个分量。
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