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公开(公告)号：US20230058436A1
公开(公告)日：2023-02-23
申请号：US17441780
申请日：2020-12-25
Applicant: ANHUI UNIVERSITY , CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor： Chunyu PENG , Yangkuo ZHAO , Wenjuan LU , Xiulong WU , Zhiting LIN , Junning CHEN , Xin LI , Rumin JI , Jun HE , Zhan YING
IPC: G11C11/4091
Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.
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公开(公告)号：US20220029586A1
公开(公告)日：2022-01-27
申请号：US17472778
申请日：2021-09-13
Applicant: ANHUI UNIVERSITY , CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor： Xiulong WU , Li ZHAO , Yangkuo ZHAO , Jun HE , Xin LI , Zhan YING , Kanyu CAO , Wenjuan LU , Chunyu PENG , Zhiting LIN , Junning CHEN
Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.
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公开(公告)号：US20220208235A1
公开(公告)日：2022-06-30
申请号：US17441679
申请日：2020-12-25
Applicant: ANHUI UNIVERSITY
Inventor： Chunyu PENG , Junlin GE , Jun HE , Zhan YING , Xin LI , Kanyu CAO , Wenjuan LU , Zhiting LIN , Xiulong WU , Junning CHEN
Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.
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公开(公告)号：US20220068357A1
公开(公告)日：2022-03-03
申请号：US17472157
申请日：2021-09-10
Applicant: ANHUI UNIVERSITY , CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor： Zhiting LIN , Guanglei Wen , Jun He , Zhan Ying , Xin Li , Kanyu Cao , Wenjuan Lu , Chunyu Peng , Xiulong Wu , Junning Chen
IPC: G11C11/4091 , G11C11/4094 , G11C11/4074 , G11C5/06
Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module, arranged to read data in a memory cell; and a control module, electrically connected to the amplification module. In a first offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first inverter and a second inverter, and each of the first inverter and the second inverter is an inverter an input terminal and an output terminal connected to each other; and in a second offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a current mirror structure.
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