公开(公告)号：US09236255B2

公开(公告)日：2016-01-12

申请号：US14313246

申请日：2014-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Wook Kim ,  Han Soo Cho ,  Joo Won Han ,  Kee Young Cho ,  Kuan-Ting Liu ,  Anisul Khan

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/115

CPC classification number: H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/11548 ,  H01L27/11575

Abstract: In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and oxygen (O2) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.

Abstract translation: 在一些实施例中，在衬底顶部形成三维NAND结构的方法可以包括向处理室提供具有交替的氮化物层和氧化物层或交替的多晶硅层和形成在衬底顶部的氧化物层的衬底，以及形成在顶部的光致抗蚀剂层 交替层; 蚀刻光致抗蚀剂层以暴露交替的氮化物层和氧化物层或交替的多晶硅层和氧化物层的至少一部分; 提供包括六氟化硫（SF6），四氟化碳（CF4）和氧气（O2））的处理气体到处理室; 向RF线圈提供约4kW至约6kW的RF功率以点燃工艺气体以形成等离子体; 并蚀刻通过所需数量的交替层以形成NAND结构的特征。