公开(公告)号：US09236255B2

公开(公告)日：2016-01-12

申请号：US14313246

申请日：2014-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Wook Kim ,  Han Soo Cho ,  Joo Won Han ,  Kee Young Cho ,  Kuan-Ting Liu ,  Anisul Khan

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/115

CPC classification number: H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/11548 ,  H01L27/11575

Abstract: In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and oxygen (O2) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.

Abstract translation: 在一些实施例中，在衬底顶部形成三维NAND结构的方法可以包括向处理室提供具有交替的氮化物层和氧化物层或交替的多晶硅层和形成在衬底顶部的氧化物层的衬底，以及形成在顶部的光致抗蚀剂层 交替层; 蚀刻光致抗蚀剂层以暴露交替的氮化物层和氧化物层或交替的多晶硅层和氧化物层的至少一部分; 提供包括六氟化硫（SF6），四氟化碳（CF4）和氧气（O2））的处理气体到处理室; 向RF线圈提供约4kW至约6kW的RF功率以点燃工艺气体以形成等离子体; 并蚀刻通过所需数量的交替层以形成NAND结构的特征。

公开(公告)号：US10265742B2

公开(公告)日：2019-04-23

申请号：US14522864

申请日：2014-10-24

Applicant: Applied Materials, Inc.

Inventor： Kee Young Cho ,  Sang Wook Kim ,  Joo Won Han ,  Han Soo Cho

IPC: B08B7/00 ,  C11D11/00 ,  C23C16/44 ,  H01J37/32

Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

公开(公告)号：US08937021B2

公开(公告)日：2015-01-20

申请号：US14306535

申请日：2014-06-17

Applicant: Applied Materials, Inc.

Inventor： Han Soo Cho ,  Sang Wook Kim ,  Joo Won Han ,  Kee Young Cho ,  Anisul H. Khan

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31116

Abstract: In some embodiments, methods for forming a three dimensional NAND structure include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon consisting layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating layers; providing a process gas comprising sulfur hexafluoride and oxygen to the process chamber; providing RF power of about 4 kW to about 6 kW to a first inductive RF coil and a second inductive RF coil disposed proximate the process chamber to ignite the process gas to form a plasma, wherein a current flowing through the first inductive RF coil is out of phase with RF current flowing through the second inductive RF coil; and etching through a desired number of the alternating layers to form a feature.

Abstract translation: 在一些实施例中，用于形成三维NAND结构的方法包括向处理室提供具有交替的氮化物层和氧化物层或交替的多晶硅组成层和形成在衬底顶部的氧化物层的衬底和在交替层上形成的光致抗蚀剂层的衬底; 蚀刻光致抗蚀剂层以暴露交替层的至少一部分; 向处理室提供包含六氟化硫和氧的工艺气体; 向第一感应RF线圈提供约4kW至约6kW的RF功率，并且设置在处理室附近以点燃处理气体以形成等离子体的第二感应RF线圈，其中流过第一感应RF线圈的电流为 的相位，RF电流流过第二感应RF线圈; 并且通过所需数量的交替层蚀刻以形成特征。