公开(公告)号：US20210020569A1

公开(公告)日：2021-01-21

申请号：US16516817

申请日：2019-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： SUKETU A. PARIKH ,  RONG TAO ,  ROEY SHAVIV ,  JOUNG JOO LEE ,  SESHADRI GANGULI ,  SHIRISH PETHE ,  DAVID GAGE ,  JIANSHE TANG ,  MICHAEL A. STOLFI

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L21/67

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.