公开(公告)号：US20200048767A1

公开(公告)日：2020-02-13

申请号：US16533357

申请日：2019-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： PRASHANTH KOTHNUR ,  SATISH RADHAKRISHNAN ,  ALEXANDER LERNER ,  SERGEI KLIMOVICH ,  ROEY SHAVIV

IPC: C23C16/455 ,  B05B1/20 ,  B05B1/18

Abstract: Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

公开(公告)号：US20210320064A1

公开(公告)日：2021-10-14

申请号：US17356717

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： SUKETU A. PARIKH ,  RONG TAO ,  ROEY SHAVIV ,  JOUNG JOO LEE ,  SESHADRI GANGULI ,  SHIRISH PETHE ,  DAVID GAGE ,  JIANSHE TANG ,  MICHAEL A STOLFI

IPC: H01L23/528 ,  H01L21/67 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

公开(公告)号：US20200087790A1

公开(公告)日：2020-03-19

申请号：US16570317

申请日：2019-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  PRASHANTH KOTHNUR ,  ROEY SHAVIV ,  SATISH RADHAKRISHNAN

IPC: C23C16/455

Abstract: Embodiments of apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

公开(公告)号：US20220351988A1

公开(公告)日：2022-11-03

申请号：US17867589

申请日：2022-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  ROEY SHAVIV ,  PHILLIP STOUT ,  JOSEPH M. RANISH ,  PRASHANTH KOTHNUR ,  SATISH RADHAKRISHNAN

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/448 ,  C23C16/44

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and the second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

公开(公告)号：US20190211442A1

公开(公告)日：2019-07-11

申请号：US16232496

申请日：2018-12-26

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  KIM VELLORE ,  AMI SADE ,  STEVEN SANSONI ,  ANDREW CONSTANT ,  KEVIN MORAES ,  ROEY SHAVIV ,  NIRANJAN KUMAR ,  JEFFREY BRODINE ,  MICHAEL KARAZIM

IPC: C23C14/50 ,  C23C14/24 ,  C23C14/04

CPC classification number: C23C14/50 ,  C23C14/042 ,  C23C14/24

Abstract: Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.

公开(公告)号：US20210020569A1

公开(公告)日：2021-01-21

申请号：US16516817

申请日：2019-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： SUKETU A. PARIKH ,  RONG TAO ,  ROEY SHAVIV ,  JOUNG JOO LEE ,  SESHADRI GANGULI ,  SHIRISH PETHE ,  DAVID GAGE ,  JIANSHE TANG ,  MICHAEL A. STOLFI

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L21/67

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

公开(公告)号：US20190287791A1

公开(公告)日：2019-09-19

申请号：US15924821

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： BEN-LI SHEU ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  ISMAIL EMESH ,  ROEY SHAVIV ,  XIANMIN TANG

IPC: H01L21/027 ,  H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

公开(公告)号：US20230092987A1

公开(公告)日：2023-03-23

申请号：US18072711

申请日：2022-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  PRASHANTH KOTHNUR ,  ROEY SHAVIV ,  SATISH RADHAKRISHNAN

IPC: C23C16/455

Abstract: Embodiments of apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

公开(公告)号：US20200251340A1

公开(公告)日：2020-08-06

申请号：US16775752

申请日：2020-01-29

Applicant: APPLIED MATERIALS, INC.

Inventor： ROEY SHAVIV ,  AVGERINOS V. GELATOS ,  ISMAIL EMESH ,  XIKUN WANG ,  YU LEI

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: Methods and apparatus for filling a feature disposed in a substrate, including: depositing a first metal within the feature to a first predetermined thickness in a first process chamber; etching the first metal to remove a first portion of the metal at a top of the feature in a second process chamber different than the first process chamber to form an exposed surface of the first metal, and selectively depositing a second metal atop the exposed surface of the first metal within the feature to a second predetermined thickness in a third process chamber; wherein etching the first metal and selectively depositing a second metal are performed without oxygen contacting the top surface.

公开(公告)号：US20200219720A1

公开(公告)日：2020-07-09

申请号：US16812593

申请日：2020-03-09

Applicant: APPLIED MATERIALS, INC.

Inventor： BEN-LI SHEU ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  ISMAIL EMESH ,  ROEY SHAVIV ,  XIANMIN TANG

IPC: H01L21/027 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.