Post fabrication tuning of an integrated circuit
    2.
    发明授权
    Post fabrication tuning of an integrated circuit 有权
    集成电路的后制造调谐

    公开(公告)号:US09374072B2

    公开(公告)日:2016-06-21

    申请号:US14268336

    申请日:2014-05-02

    Applicant: ARM Limited

    CPC classification number: H03K5/133

    Abstract: An integrated circuit 2 includes a transistor 26 which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.

    Abstract translation: 集成电路2包括晶体管26,其具有在该晶体管的正常操作期间产生正常切换速度,其在正常范围内施加电信号。 如果希望改变晶体管的操作速度,则速度调节电路12将具有超出正常特性范围的调谐特性的调谐电信号施加到相关的晶体管。 调谐电信号引起该晶体管的至少一个物理特性的变化,使得当其恢复其修改的正常操作时,该晶体管的开关速度将改变。 调谐电信号可以是在施加到晶体管的栅极的正常的电压范围之外的电压(或电流),以便引起该晶体管的阈值的永久增加,并因此降低其转换速度。 也可以控制晶体管的温度以引起性能/速度的永久性变化。

    Post fabrication tuning of an integrated circuit
    3.
    发明授权
    Post fabrication tuning of an integrated circuit 有权
    集成电路的后制造调谐

    公开(公告)号:US08717084B1

    公开(公告)日:2014-05-06

    申请号:US13706718

    申请日:2012-12-06

    Applicant: ARM Limited

    CPC classification number: H03K5/133

    Abstract: An integrated circuit 2 includes a transistor 26 which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.

    Abstract translation: 集成电路2包括晶体管26,其具有在该晶体管的正常操作期间产生正常切换速度,其在正常范围内施加电信号。 如果希望改变晶体管的操作速度,则速度调节电路12将具有超出正常特性范围的调谐特性的调谐电信号施加到相关的晶体管。 调谐电信号引起该晶体管的至少一个物理特性的变化,使得当其恢复其修改的正常操作时,该晶体管的开关速度将改变。 调谐电信号可以是施加到晶体管的栅极的正常电压范围之外的电压(或电流),以引起该晶体管的阈值的永久增加,并因此降低其转换速度。 也可以控制晶体管的温度以引起性能/速度的永久性变化。

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