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公开(公告)号:US12230506B2
公开(公告)日:2025-02-18
申请号:US18319330
申请日:2023-05-17
Applicant: ASM IP HOLDING B.V.
Inventor: Mikko Ritala , Chao Zhang , Markku Leskelä
IPC: H01L21/311 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/306 , H01L21/3105
Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.
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公开(公告)号:US20210407818A1
公开(公告)日:2021-12-30
申请号:US17353491
申请日:2021-06-21
Applicant: ASM IP HOLDING B.V.
Inventor: Mikko Ritala , Chao Zhang , Markku Leskelä
IPC: H01L21/311
Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.
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公开(公告)号:US11694903B2
公开(公告)日:2023-07-04
申请号:US17353491
申请日:2021-06-21
Applicant: ASM IP HOLDING B.V.
Inventor: Mikko Ritala , Chao Zhang , Markku Leskelä
IPC: H01L21/311 , H01L21/306 , H01L21/02 , H01L21/285 , H01L21/033 , H01L21/3105
CPC classification number: H01L21/31138 , H01L21/0228 , H01L21/0337 , H01L21/28562 , H01L21/30604 , H01L21/31051 , H01L21/31127
Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.
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公开(公告)号:US20230307247A1
公开(公告)日:2023-09-28
申请号:US18319330
申请日:2023-05-17
Applicant: ASM IP HOLDING B.V.
Inventor: Mikko Ritala , Chao Zhang , Markku Leskelä
IPC: H01L21/311 , H01L21/306 , H01L21/02 , H01L21/285 , H01L21/033 , H01L21/3105
CPC classification number: H01L21/31138 , H01L21/30604 , H01L21/0228 , H01L21/28562 , H01L21/0337 , H01L21/31051 , H01L21/31127
Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.
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