公开(公告)号：US20230343596A1

公开(公告)日：2023-10-26

申请号：US18135799

申请日：2023-04-18

Applicant: ASM IP Holding B.V.

Inventor： Jaebeom Lee ,  Charith Eranga Nanayakkara ,  Roghayyeh Lotfi ,  Paul Ma

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28568 ,  H01L21/76877

Abstract: Methods for forming structures with reduced feature (e.g., line) bending are provided. Exemplary methods include using a cyclic deposition process, forming a layer comprising one or more of molybdenum, tungsten, and ruthenium, and providing a nitrogen-containing reactant to the reaction chamber to form a transient surface species. Use of the nitrogen-containing reactant is thought to mitigate metal interactions that are thought to contribute to feature bending.

公开(公告)号：US20230349040A1

公开(公告)日：2023-11-02

申请号：US18141694

申请日：2023-05-01

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Jiyeon Kim ,  Jaebeom Lee ,  Charith Eranga Nanayakkara ,  Paul Ma ,  Chuandao Wang ,  YoungChol Byun ,  Jacqueline Wrench ,  Guannan Chen

IPC: C23C16/22 ,  C23C16/455 ,  C23C16/04 ,  C23C16/06

CPC classification number: C23C16/22 ,  C23C16/45525 ,  C23C16/045 ,  C23C16/06

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

公开(公告)号：US12241158B2

公开(公告)日：2025-03-04

申请号：US17376336

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Charith Eranga Nanayakkara

IPC: C23C16/14 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for forming transition metal layers on a surface of a substrate are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.

公开(公告)号：US20220018025A1

公开(公告)日：2022-01-20

申请号：US17376336

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Charith Eranga Nanayakkara

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/14 ,  C23C16/34 ,  C23C16/32 ,  C23C16/52

Abstract: Methods and systems for forming transition metal layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.