公开(公告)号：US20230349040A1

公开(公告)日：2023-11-02

申请号：US18141694

申请日：2023-05-01

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Jiyeon Kim ,  Jaebeom Lee ,  Charith Eranga Nanayakkara ,  Paul Ma ,  Chuandao Wang ,  YoungChol Byun ,  Jacqueline Wrench ,  Guannan Chen

IPC: C23C16/22 ,  C23C16/455 ,  C23C16/04 ,  C23C16/06

CPC classification number: C23C16/22 ,  C23C16/45525 ,  C23C16/045 ,  C23C16/06

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.