公开(公告)号：US20250079156A1

公开(公告)日：2025-03-06

申请号：US18814949

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Patricio Romero ,  Charles Dezelah ,  Suvidyakumar Vinod Homkar ,  Petro Deminskyi ,  Balaji Kannan ,  Michael Eugene Givens ,  Mikko Leander Nisula

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28

Abstract: The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures comprising a dipole layer, which comprises a metal and nitrogen containing film, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the semiconductor structure comprising a dipole layer, comprises the steps of providing a substrate to a reaction chamber; contacting one or more metal precursor on at least part of the substrate by introducing the metal precursor in the reaction chamber; and reacting the deposited metal precursor with a nitrogen reactant in the reaction chamber, thereby forming a metal and nitrogen containing film on at least part of the substrate.