公开(公告)号：US20240102163A1

公开(公告)日：2024-03-28

申请号：US18463034

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： Patricio Romero ,  Charles Dezelah ,  Viljami J. Pore

IPC: C23C16/455

CPC classification number: C23C16/45553

Abstract: Compositions, related methods, and related systems are disclosed. The compositions can comprise a precursor and a liquid solvent. The precursor can be unstable in substantially pure form in an inert atmosphere at a temperature of at least 10° C. to at most 100° C. The solvent can have a vapor pressure of at most 1.0 mPa at a temperature of 20° C.

公开(公告)号：US20250079156A1

公开(公告)日：2025-03-06

申请号：US18814949

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Patricio Romero ,  Charles Dezelah ,  Suvidyakumar Vinod Homkar ,  Petro Deminskyi ,  Balaji Kannan ,  Michael Eugene Givens ,  Mikko Leander Nisula

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28

Abstract: The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures comprising a dipole layer, which comprises a metal and nitrogen containing film, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the semiconductor structure comprising a dipole layer, comprises the steps of providing a substrate to a reaction chamber; contacting one or more metal precursor on at least part of the substrate by introducing the metal precursor in the reaction chamber; and reacting the deposited metal precursor with a nitrogen reactant in the reaction chamber, thereby forming a metal and nitrogen containing film on at least part of the substrate.

公开(公告)号：US20240209504A1

公开(公告)日：2024-06-27

申请号：US18390061

申请日：2023-12-20

Applicant: ASM IP Holding B.V.

Inventor： Janne-Petteri Niemelä ,  Elina Färm ,  Charles Dezelah ,  Jan Willem Maes ,  Patricio Romero

IPC: C23C16/455 ,  C23C16/14

CPC classification number: C23C16/45553 ,  C23C16/14

Abstract: The current disclosure relates to methods for forming a film comprising transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and a device comprising a layer that comprises a transition metal. In the method, transition metal is deposited on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reactor chamber and executing a cyclical deposition process. The cyclical deposition process comprises the steps of providing a transition metal precursor in vapor phase into the reaction chamber and providing a halogen precursor in vapor phase into the reaction chamber to form a film comprising elemental transition metal on a substrate. The halogen precursor comprises only one halogen atom. The disclosure further relates to a deposition assembly for depositing a material comprising transition metal on a substrate.

公开(公告)号：US20240203730A1

公开(公告)日：2024-06-20

申请号：US18544019

申请日：2023-12-18

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Patricio Romero ,  Michael Eugene Givens ,  Charles Dezelah

IPC: H01L21/02 ,  C30B25/16 ,  C30B25/20 ,  C30B29/52 ,  C30B31/08 ,  C30B33/12

CPC classification number: H01L21/02532 ,  C30B25/16 ,  C30B25/20 ,  C30B29/52 ,  C30B31/08 ,  C30B33/12 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02636

Abstract: A method of forming a Si-comprising epitaxial layer selectively on a substrate and a semiconductor processing apparatus is disclosed. Embodiments of the presently described method of forming the Si-comprising epitaxial layer comprise performing a deposition process for forming the Si-comprising epitaxial layer selectively on a first exposed single crystalline surface relative to a second exposed single crystalline surface being different than the first exposed single crystalline surface.