公开(公告)号：US20240218505A1

公开(公告)日：2024-07-04

申请号：US18396829

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Sang Ho Yu ,  Sukanya Datta ,  Chiyu Zhu ,  Jan Willem Maes ,  Saima Ali ,  Elina Färm

IPC: C23C16/42 ,  C23C16/04

CPC classification number: C23C16/42 ,  C23C16/04

Abstract: Methods of forming molybdenum silicide are disclosed. Exemplary methods can include selectively forming molybdenum silicide on a first surface relative to a second surface. Additionally or alternatively, exemplary methods can include a cleaning step prior to forming the molybdenum silicide.

公开(公告)号：US20230295795A1

公开(公告)日：2023-09-21

申请号：US18119884

申请日：2023-03-10

Applicant: ASM IP Holding B.V.

Inventor： Yasiel Cabrera ,  YoungChol Byun ,  Arul Vigneswar Ravichandran ,  Salvatore Luiso ,  Sang Ho Yu ,  Moataz Bellah Mousa

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/303 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32853 ,  H01J2237/3321 ,  H01J2237/335

Abstract: Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.