公开(公告)号：USD948463S1

公开(公告)日：2022-04-12

申请号：US29679620

申请日：2019-02-07

Applicant: ASM IP Holding B.V.

Designer： Seung Hwan Lee ,  Hak Yong Kwon ,  Jong Su Kim ,  Sung Bae Kim ,  Ju Hyuk Park

公开(公告)号：US20190311940A1

公开(公告)日：2019-10-10

申请号：US16252569

申请日：2019-01-18

Applicant: ASM IP Holding B.V.

Inventor： Seung Woo Choi ,  Seung Hwan Lee ,  Ju Hyuk Park

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67 ,  C23C16/40 ,  C23C16/458

Abstract: A substrate processing method capable of stably loading a substrate regardless of a variation in pressure of a reaction space includes supplying an inert gas; and forming a thin film by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas, wherein a center portion of a substrate and a center portion of a susceptor are spaced apart from each other to form a separate space, the reaction space above the substrate and the separate space communicate with each other via one or more channels, an inert gas is introduced to the separate space through the one or more channels during the supplying of the inert gas, and the inert gas prevents pressure imbalance between the separate space and the reaction space during a thin film deposition process.

公开(公告)号：US12230531B2

公开(公告)日：2025-02-18

申请号：US17510239

申请日：2021-10-25

Applicant: ASM IP Holding B.V.

Inventor： Seung Woo Choi ,  Seung Hwan Lee ,  Ju Hyuk Park

IPC: H01L21/687 ,  C23C16/40 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67

Abstract: A substrate processing method capable of stably loading a substrate regardless of a variation in pressure of a reaction space includes supplying an inert gas; and forming a thin film by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas, wherein a center portion of a substrate and a center portion of a susceptor are spaced apart from each other to form a separate space, the reaction space above the substrate and the separate space communicate with each other via one or more channels, an inert gas is introduced to the separate space through the one or more channels during the supplying of the inert gas, and the inert gas prevents pressure imbalance between the separate space and the reaction space during a thin film deposition process.