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    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US10438965B2

    公开(公告)日：2019-10-08

    申请号：US15798150

    申请日：2017-10-30

    申请人： ASM IP Holding B.V.

    发明人： Young Jae Kim ,  Seung Woo Choi ,  Yong Min Yoo

    IPC分类号： H01L27/11582 ,  H01L21/225 ,  H01L21/28

    摘要： Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-dimensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.

    METHOD OF FORMING THIN FILM
    3.
    发明申请
    METHOD OF FORMING THIN FILM 审中-公开
    形成薄膜的方法

    公开(公告)号：US20160284534A1

    公开(公告)日：2016-09-29

    申请号：US15080004

    申请日：2016-03-24

    申请人： ASM IP Holding B.V.

    发明人： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

    IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/455

    CPC分类号： H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274

    摘要： Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

    摘要翻译： 提供了通过原子层沉积（ALD）方法在基板上形成具有目标厚度T的薄膜的方法。 该方法包括n个处理条件，每个处理条件各自具有不同于其的成长速率，并将a1确定为第一处理条件到第n处理条件的循环，使得| T（a1× G1 + a2×G2 + ... + an×Gn）| 小于G1，G2中的最小值。 。 。 和Gn，其中n是2或更大的整数，G1，...。 。 。 ，Gn分别表示作为第一处理条件的膜生长速度的第一膜生长速度。 。 。 以及作为第n处理条件的膜生长速度的第n膜生长速度，膜生长率表示在每个处理条件下每单位周期形成的膜的厚度。 当执行ALD时，成膜方法可以精确且均匀地控制薄膜的厚度。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20160181273A1

    公开(公告)日：2016-06-23

    申请号：US14938180

    申请日：2015-11-11

    申请人： ASM IP Holding B.V.

    发明人： Young Jae Kim ,  Seung Woo Choi ,  Yong Min Yoo

    IPC分类号： H01L27/115 ,  H01L29/04

    CPC分类号： H01L27/11582 ,  H01L21/2255 ,  H01L21/28282

    摘要： Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-demensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.

    摘要翻译： 公开了一种半导体器件及其制造方法。 根据根据本发明的示例性实施例的半导体器件及其制造方法，在掺杂剂源层通过等离子体增强原子层沉积（均匀地沉积在具有3维垂直结构的器件的沟道层上之后） PEALD）方法，将沉积的掺杂剂源层进行热处理，使得掺杂剂扩散到沟道层中以用作电荷载流子，从而防止沟道层中的电荷减小。 根据本发明的示例性实施例，可以通过在沟道层和掺杂剂源层之间形成势垒层来控制掺杂剂的扩散速度和浓度。

    DEPOSITION APPARATUS
    6.
    发明申请
    DEPOSITION APPARATUS 审中-公开
    沉积装置

    公开(公告)号：US20140202382A1

    公开(公告)日：2014-07-24

    申请号：US14157626

    申请日：2014-01-17

    申请人： ASM IP Holding B.V.

    发明人： Young-Jae KIM ,  Ki Jong Kim ,  Dong-Rak Jung ,  Hak Yong Kwon ,  Seung Woo Choi

    IPC分类号： C23C16/458

    CPC分类号： C23C16/4401 ,  C23C16/4586 ,  H01L21/68742

    摘要： A deposition apparatus is provided to eliminate unnecessary empty spaces that may form between a substrate and a substrate supporting pin, which may be formed within a substrate supporting pin hole, by covering the substrate supporting pin, inserted into the substrate supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.

    摘要翻译： 提供一种沉积装置，用于通过覆盖插入基板支撑销中形成的基板支撑销孔中的基板和基板支撑销之间形成的不必要的空白空间，该基板可以形成在基板支撑销孔内。 基板支撑，由衬底支撑销盖装载在基板支撑上。 因此，衬底下的温度可以保持恒定，并且可以避免寄生等离子体或污染颗粒的产生。

    SUBSTRATE PROCESSING METHOD
    10.
    发明申请
    SUBSTRATE PROCESSING METHOD 审中-公开

    公开(公告)号：US20190304776A1

    公开(公告)日：2019-10-03

    申请号：US16255639

    申请日：2019-01-23

    申请人： ASM IP Holding B.V.

    发明人： Seung Woo Choi

    IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  H01L21/311 ,  H01L21/033

    摘要： A substrate processing method capable of uniformly maintaining damage to a pattern structure under a thin film formed on a substrate includes supplying a source material to a substrate on which a pattern structure that is reactive with a reactant is formed; and supplying the reactant through at least a central gas inlet of a supply unit in a plasma atmosphere, wherein, during the supplying of the reactant, a blocking material different from the reactant is supplied through an additional gas inlet that is spaced apart from the central gas inlet of the supply unit, and a flow of the blocking material at the edge of the substrate is increased, thereby increasing a radical density of the reactant near a center of the substrate.