公开(公告)号：US20210035854A1

公开(公告)日：2021-02-04

申请号：US16932707

申请日：2020-07-18

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  YoungHoon Kim ,  SeWoong Jung

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/02

Abstract: Methods of forming structures that include a step of treating a layer to remove residual etchant compounds, such as fluorine, are disclosed. Exemplary methods can be used to fill features on a surface of a substrate during a device manufacturing process.

公开(公告)号：US20220301823A1

公开(公告)日：2022-09-22

申请号：US17694297

申请日：2022-03-14

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  SeWoong Jung

IPC: H01J37/32 ,  H01L21/02

Abstract: A substrate processing method capable of suppressing void formation includes supplying a silicon precursor on a pattern structure to form a silicon source layer having a first opening; and supplying plasma on the silicon source layer to volatilize constituents other than silicon included in the silicon source layer to enlarge the first opening.

公开(公告)号：US20230030566A1

公开(公告)日：2023-02-02

申请号：US17866730

申请日：2022-07-18

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  SeWoong Jung ,  JuHyuk Park

IPC: H01L21/02

Abstract: A substrate processing method of filling a recess without voids or seams includes least partially filling a trench with a first material on a substrate including the trench; and supplying at least one constituent element included in the first material and applying plasma to induce fluidization of the first material.

公开(公告)号：US11274369B2

公开(公告)日：2022-03-15

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

公开(公告)号：US11823866B2

公开(公告)日：2023-11-21

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01J37/32174 ,  H01L21/02274 ,  H01L21/02208 ,  H01L21/76224

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

公开(公告)号：US20210313150A1

公开(公告)日：2021-10-07

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01J37/32 ,  H01L21/02

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

公开(公告)号：US20200080200A1

公开(公告)日：2020-03-12

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.