公开(公告)号：US20230323534A1

公开(公告)日：2023-10-12

申请号：US18205716

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  HaRim Kim ,  YoonKi Min ,  KyungEun Lee ,  Zhenyu Jin ,  HakJoon Lee

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/34

CPC classification number: C23C16/45536 ,  H01L21/0228 ,  H01J37/32449 ,  H01J37/32082 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02211 ,  H01L21/02164 ,  H01L21/0217 ,  C23C16/4404 ,  C23C16/345 ,  H01J2237/332

Abstract: A substrate processing method capable of forming a film with an improved step coverage and/or improved and/or more uniform properties on a surface of a gap structure having a high aspect ratio is provided. An exemplary substrate processing method includes: providing a gap structure; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US20230099798A1

公开(公告)日：2023-03-30

申请号：US17950254

申请日：2022-09-22

Applicant: ASM IP Holding B.V.

Inventor： KyungEun Lee ,  HaRim Kim ,  IkDu Nam

IPC: C23C16/455

Abstract: A showerhead for supplying a gas includes a showerhead body having an upper surface and a lower surface opposite to the upper surface, and a plurality of through-holes formed in the showerhead body so that the gas passes through from the upper surface toward the lower surface, wherein a size of a cross-sectional area of each through-hole of the plurality of through-holes in the lower surface is the same, while the size of the cross-sectional area of each through-hole in the upper surface increases from a center of the showerhead toward an edge thereof.

公开(公告)号：US11823866B2

公开(公告)日：2023-11-21

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01J37/32174 ,  H01L21/02274 ,  H01L21/02208 ,  H01L21/76224

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

公开(公告)号：US20230110980A1

公开(公告)日：2023-04-13

申请号：US17962859

申请日：2022-10-10

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  KyungEun Lee ,  HakJoon Lee ,  YoonKi Min ,  HaRim Kim ,  DongHyun Ko ,  Seongil Cho

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/505

Abstract: A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US20230096453A1

公开(公告)日：2023-03-30

申请号：US17951551

申请日：2022-09-23

Applicant: ASM IP Holding B.V.

Inventor： ChangWan Lee ,  KyungEun Lee ,  HakJoon Lee ,  SungKyu Kang

IPC: C23C16/455 ,  C23C16/56

Abstract: A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.

公开(公告)号：US20210313150A1

公开(公告)日：2021-10-07

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01J37/32 ,  H01L21/02

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.