公开(公告)号：US20200002812A1

公开(公告)日：2020-01-02

申请号：US16454063

申请日：2019-06-27

Applicant: ASM IP Holding B.V.

Inventor： ManSu Lee ,  SungKyu Kang ,  EunSook Lee ,  MinSoo Kim ,  SeungWoo Choi

IPC: C23C16/455 ,  H01L21/033

Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).

公开(公告)号：US11814728B2

公开(公告)日：2023-11-14

申请号：US17236782

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  HakYong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US20230092185A1

公开(公告)日：2023-03-23

申请号：US17941211

申请日：2022-09-09

Applicant: ASM IP Holding B.V.

Inventor： DongHyun Ko ,  HakJoon Lee ,  SungKyu Kang

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: In one embodiment, a particle with a first particle thickness may be formed on a film with a first thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. In another embodiment, a particle with a first particle thickness may be formed on a first film with a first film thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. After the plasma treatment, a second film with a third film thickness may be deposited on the first film and the particle may be buried in the second film.

公开(公告)号：US10914004B2

公开(公告)日：2021-02-09

申请号：US16454063

申请日：2019-06-27

Applicant: ASM IP Holding B.V.

Inventor： ManSu Lee ,  SungKyu Kang ,  EunSook Lee ,  MinSoo Kim ,  SeungWoo Choi

IPC: C23C16/455 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).

公开(公告)号：US20240043997A1

公开(公告)日：2024-02-08

申请号：US18378403

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  Hak-Yong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US11823866B2

公开(公告)日：2023-11-21

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01J37/32174 ,  H01L21/02274 ,  H01L21/02208 ,  H01L21/76224

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

公开(公告)号：US20230096453A1

公开(公告)日：2023-03-30

申请号：US17951551

申请日：2022-09-23

Applicant: ASM IP Holding B.V.

Inventor： ChangWan Lee ,  KyungEun Lee ,  HakJoon Lee ,  SungKyu Kang

IPC: C23C16/455 ,  C23C16/56

Abstract: A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.

公开(公告)号：US20210313150A1

公开(公告)日：2021-10-07

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01J37/32 ,  H01L21/02

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.