公开(公告)号：USD829306S1

公开(公告)日：2018-09-25

申请号：US29570199

申请日：2016-07-06

Applicant: ASM IP Holding B.V.

Designer： Yozo Ikedo ,  Takafumi Hisamitsu

公开(公告)号：US10704143B1

公开(公告)日：2020-07-07

申请号：US16257185

申请日：2019-01-25

Applicant: ASM IP Holding B.V.

Inventor： Takafumi Hisamitsu ,  Seiji Okura

IPC: C23C16/455 ,  C23C16/40

Abstract: Examples of a oxide film forming method include providing a precursor to a reaction space including a substrate and a susceptor, and forming an oxide film on the substrate by introducing at least one of CxOy and NxOy (x and y are integers) as a reactant gas into the reaction space while applying a pulse RF power having a duty cycle less than 60% to an RF plate to generate plasma of the reactant gas, the RF plate being provided in the reaction space so as to face the susceptor, wherein the providing and the forming are repeated a predetermined number of times.

公开(公告)号：USD944946S1

公开(公告)日：2022-03-01

申请号：US29695044

申请日：2019-06-14

Applicant: ASM IP Holding B.V.

Designer： Wataru Adachi ,  Takafumi Hisamitsu