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    Method for Stabilizing Reaction Chamber Pressure
    3.
    发明申请
    Method for Stabilizing Reaction Chamber Pressure 有权
    稳定反应室压力的方法

    公开(公告)号：US20150284848A1

    公开(公告)日：2015-10-08

    申请号：US14246969

    申请日：2014-04-07

    Applicant: ASM IP Holding B.V.

    Inventor： Ryu Nakano ,  Wataru Adachi

    IPC: C23C16/455

    CPC classification number: C23C16/45557 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561 ,  Y10T137/0396

    Abstract: A method stabilizes pressure of a reaction chamber during a process using a first gas and a second gas, wherein a gas inlet line is connected to the reaction chamber, and a second gas line and a first gas line are connected to another end of the gas inlet line. The method includes: feeding a first gas in pulses according to a waveform to the reaction chamber through the first gas line and the gas inlet line; and feeding a second gas in pulses according to a reverse waveform to the reaction chamber through the second gas line and the gas inlet line, wherein superimposed waveforms of the waveform and reverse waveform are made substantially or nearly fiat, thereby stabilizing pressure of the reaction chamber.

    Abstract translation: 一种方法在使用第一气体和第二气体的过程中稳定反应室的压力，其中气体入口管线连接到反应室，并且第二气体管线和第一气体管线连接到气体的另一端 入口线。 该方法包括：通过第一气体管线和气体入口管线将根据波形脉冲的第一气体进料到反应室; 并且通过第二气体管线和气体入口管线将根据反向波形的脉冲的第二气体进料到反应室，其中波形和反向波形的叠加波形基本上或几乎均匀地进行，从而使反应室的压力稳定 。

    Method for controlling cyclic plasma-assisted process
    4.
    发明授权
    Method for controlling cyclic plasma-assisted process 有权
    控制循环等离子体辅助过程的方法

    公开(公告)号：US08790743B1

    公开(公告)日：2014-07-29

    申请号：US13784388

    申请日：2013-03-04

    Applicant: ASM IP Holding B.V.

    Inventor： Taku Omori ,  Naoki Inoue ,  Wataru Adachi

    IPC: C23C16/52

    CPC classification number: C23C16/52 ,  C23C16/45536 ,  H01J37/32146 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299

    Abstract: A method for processing a substrate in a reactor by pulsing RF power, includes: applying RF power in pulses in the reactor to process the substrate; monitoring data from the reactor indicative of anomalous pulses of RF power, including data from a photo sensor equipped in the reactor; counting the number of anomalous pulses of RF power in the monitored data; determining whether or not the number of anomalous pulses of RF power is acceptable; and initiating a pre-designated sequence if the number of anomalous pulses of RF power is determined to be unacceptable.

    Abstract translation: 一种用于通过脉冲RF功率来处理反应器中的衬底的方法，包括：在反应器中以脉冲施加RF功率以处理衬底; 监测来自反应堆的指示RF功率的异常脉冲的数据，包括来自安装在反应器中的光传感器的数据; 对监测数据中的RF功率的异常脉冲数进行计数; 确定RF功率的异常脉冲数是否可接受; 以及如果RF功率的异常脉冲数被确定为不可接受，则启动预定序列。

    SUBSTRATE PROCESSING METHOD
    5.
    发明申请
    SUBSTRATE PROCESSING METHOD 有权

    公开(公告)号：US20250046605A1

    公开(公告)日：2025-02-06

    申请号：US18788490

    申请日：2024-07-30

    Applicant: ASM IP Holding B.V.

    Inventor： Wataru Adachi

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

    Abstract: Provided is a method for forming a low-k film by PEALD. In one embodiment, a first silicon precursor is supplied, followed by a second silicon precursor in order to form a silicon precursor layers. Then oxidant is supplied to form a silicon oxide film. The method further comprises a post treatment in order to remove a moisture from the film. The method according to the disclosure enables to form a silicon oxide film with desired low-k value and good step coverage on the recess structure.

    Shower plate structure for supplying carrier and dry gas
    6.
    发明授权
    Shower plate structure for supplying carrier and dry gas 有权

    公开(公告)号：US11149350B2

    公开(公告)日：2021-10-19

    申请号：US15867669

    申请日：2018-01-10

    Applicant: ASM IP HOLDING B.V.

    Inventor： Wataru Adachi ,  Kazuo Sato

    IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01L21/02

    Abstract: A shower plate for a plasma deposition apparatus, the shower plate including: a plurality of apertures each extending from a rear surface of the shower plate to a front surface for passing a carrier gas therethrough in this direction to a chamber, a plurality of first apertures each extending from a first connecting aperture to an inner part of the front surface for passing gas therethrough in this direction to the chamber, and a plurality of second apertures each extending from a second connecting aperture to an outer part of the front surface for passing gas therethrough in this direction to the chamber, wherein the first connecting aperture connects the first apertures to at least one first aperture extending from a sidewall side of the shower plate and the second connecting aperture connects the second apertures to at least one second aperture extending from the sidewall side.

    Method for stabilizing reaction chamber pressure
    7.
    发明授权
    Method for stabilizing reaction chamber pressure 有权

    公开(公告)号：US09663857B2

    公开(公告)日：2017-05-30

    申请号：US14246969

    申请日：2014-04-07

    Applicant: ASM IP Holding B.V.

    Inventor： Ryu Nakano ,  Wataru Adachi

    IPC: C23C16/455

    CPC classification number: C23C16/45557 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561 ,  Y10T137/0396

    Abstract: A method stabilizes pressure of a reaction chamber during a process using a first gas and a second gas, wherein a gas inlet line is connected to the reaction chamber, and a second gas line and a first gas line are connected to another end of the gas inlet line. The method includes: feeding a first gas in pulses according to a waveform to the reaction chamber through the first gas line and the gas inlet line; and feeding a second gas in pulses according to a reverse waveform to the reaction chamber through the second gas line and the gas inlet line, wherein superimposed waveforms of the waveform and reverse waveform are made substantially or nearly flat, thereby stabilizing pressure of the reaction chamber.

    DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS
    8.
    发明申请
    DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS 有权
    含硼和含碳材料的沉积

    公开(公告)号：US20150287591A1

    公开(公告)日：2015-10-08

    申请号：US14686595

    申请日：2015-04-14

    Applicant: ASM IP HOLDING B.V.

    Inventor： Viljami J. Pore ,  Yosuke Kimura ,  Kunitoshi Namba ,  Wataru Adachi ,  Hideaki Fukuda ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed

    IPC: H01L21/02

    CPC classification number: H01L21/02112 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/2254 ,  H01L21/31111

    Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.

    Abstract translation: 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在低于约400℃的温度下在基材上分解。含硼和碳的一种或多种膜可以具有小于约30埃的厚度。 提供掺杂半导体衬底的方法。 掺杂半导体衬底可以包括通过在大约300℃至大约450℃的工艺温度下将衬底暴露于气相硼前体而在半导体衬底上沉积硼和碳膜，其中硼前体包括硼， 碳和氢，并在约800℃至约1200℃的温度下退火硼和碳膜。

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