公开(公告)号：US10704143B1

公开(公告)日：2020-07-07

申请号：US16257185

申请日：2019-01-25

申请人： ASM IP Holding B.V.

发明人： Takafumi Hisamitsu ,  Seiji Okura

IPC分类号： C23C16/455 ,  C23C16/40

摘要： Examples of a oxide film forming method include providing a precursor to a reaction space including a substrate and a susceptor, and forming an oxide film on the substrate by introducing at least one of CxOy and NxOy (x and y are integers) as a reactant gas into the reaction space while applying a pulse RF power having a duty cycle less than 60% to an RF plate to generate plasma of the reactant gas, the RF plate being provided in the reaction space so as to face the susceptor, wherein the providing and the forming are repeated a predetermined number of times.

公开(公告)号：US10002755B2

公开(公告)日：2018-06-19

申请号：US15384028

申请日：2016-12-19

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28

CPC分类号： H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US11195712B2

公开(公告)日：2021-12-07

申请号：US16742079

申请日：2020-01-14

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20190043711A1

公开(公告)日：2019-02-07

申请号：US15996062

申请日：2018-06-01

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  H01L21/033 ,  C23C16/455 ,  H01L21/28

CPC分类号： H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US09523148B1

公开(公告)日：2016-12-20

申请号：US14835465

申请日：2015-08-25

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： C23C16/30 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  H01L21/28

CPC分类号： H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

摘要翻译： 提供了用于沉积可用于例如集成电路制造中的基本上无定形的氮氧化钛薄膜的方法，例如在间距倍增过程中形成间隔物。 该方法包括使底物与钛反应物接触并除去过量的钛反应物和反应副产物（如果有的话）。 然后将衬底与包含由等离子体产生的反应物质的第二反应物接触，其中一个反应性物质包含氮。 第二反应物和反应副产物（如果有的话）被除去。 重复接触和除去步骤，直至形成所需厚度的氮氧化钛薄膜。

公开(公告)号：US20200251330A1

公开(公告)日：2020-08-06

申请号：US16742079

申请日：2020-01-14

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20190172705A1

公开(公告)日：2019-06-06

申请号：US16268260

申请日：2019-02-05

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  H01L21/28 ,  C23C16/455 ,  C23C16/30 ,  H01L21/311 ,  H01L21/033

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20170140926A1

公开(公告)日：2017-05-18

申请号：US15384028

申请日：2016-12-19

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  C23C16/30 ,  H01L21/311 ,  C23C16/455

CPC分类号： H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US09540729B1

公开(公告)日：2017-01-10

申请号：US14835456

申请日：2015-08-25

申请人： ASM IP Holding B.V.

发明人： Seiji Okura ,  Hidemi Suemori ,  Viljami J. Pore

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L49/02 ,  C23C16/40

CPC分类号： C23C16/45529 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45538 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L28/75

摘要： Processes are provided for depositing titanium nanolaminate thin films that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. In some embodiments a titanium nanolaminate film comprising titanium oxide layers and titanium nitride layers is deposited on a three-dimensional feature, such as an existing mask feature. The conformal titanium nanolaminate film may be directionally etched so that only the titanium nanolaminate deposited or formed on the sidewalls of the existing three-dimensional feature remains. The three-dimensional feature is then removed via an etching process, leaving the pitch doubled titanium nanolaminate film.

摘要翻译： 提供了用于沉积可用于例如集成电路制造中的钛纳米级氨酸盐薄膜的方法，例如在间距倍增过程中形成间隔物。 在一些实施方案中，包含氧化钛层和氮化钛层的钛纳米层合膜被沉积在诸如现有掩模特征的三维特征上。 可以对保形的钛纳米膜进行定向蚀刻，使得仅保留沉积或形成在现有三维特征的侧壁上的钛纳米层状钛。 然后通过蚀刻工艺去除三维特征，留下螺距倍增的钛纳米质膜。

公开(公告)号：US10546744B2

公开(公告)日：2020-01-28

申请号：US16268260

申请日：2019-02-05

申请人： ASM IP Holding B.V.

发明人： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC分类号： H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

摘要： A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.