FILM-FORMING MATERIAL MIXED-GAS FORMING DEVICE AND FILM FORMING DEVICE

    公开(公告)号:US20210054504A1

    公开(公告)日:2021-02-25

    申请号:US16996886

    申请日:2020-08-18

    Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.

    Film forming apparatus
    4.
    发明授权

    公开(公告)号:US10526704B2

    公开(公告)日:2020-01-07

    申请号:US14609758

    申请日:2015-01-30

    Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.

    Film-forming material mixed-gas forming device and film forming device

    公开(公告)号:US11639548B2

    公开(公告)日:2023-05-02

    申请号:US16996886

    申请日:2020-08-18

    Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.

    Substrate treatment apparatus
    6.
    发明授权

    公开(公告)号:US10435789B2

    公开(公告)日:2019-10-08

    申请号:US15370834

    申请日:2016-12-06

    Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.

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