公开(公告)号：US11624112B2

公开(公告)日：2023-04-11

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455 ,  C01G39/06 ,  G01N30/72

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US11047042B2

公开(公告)日：2021-06-29

申请号：US15569707

申请日：2016-05-24

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455 ,  G01N30/72 ,  C01G39/06

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20230227977A1

公开(公告)日：2023-07-20

申请号：US18180056

申请日：2023-03-07

Applicant: ASM IP HOLDING B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/16

CPC classification number: C23C16/45553 ,  C23C16/16 ,  C23C16/45536

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20210269915A1

公开(公告)日：2021-09-02

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.