公开(公告)号：US20180155832A1

公开(公告)日：2018-06-07

申请号：US15827988

申请日：2017-11-30

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45534 ,  C23C16/06 ,  C23C16/08 ,  C23C16/305 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20160265110A1

公开(公告)日：2016-09-15

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/50

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

Abstract translation: 本申请涉及用于生产金属磷酸盐如磷酸钛，磷酸铝和磷酸锂的原子层沉积（ALD）方法，以及用于沉积硅酸锂的ALD工艺。

公开(公告)号：US11821084B2

公开(公告)日：2023-11-21

申请号：US17448586

申请日：2021-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/30 ,  C23C16/06 ,  C23C16/34

CPC classification number: C23C16/45534 ,  C23C16/06 ,  C23C16/08 ,  C23C16/305 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20230227977A1

公开(公告)日：2023-07-20

申请号：US18180056

申请日：2023-03-07

Applicant: ASM IP HOLDING B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/16

CPC classification number: C23C16/45553 ,  C23C16/16 ,  C23C16/45536

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20220002868A1

公开(公告)日：2022-01-06

申请号：US17448586

申请日：2021-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US11155917B2

公开(公告)日：2021-10-26

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20210269915A1

公开(公告)日：2021-09-02

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US11624112B2

公开(公告)日：2023-04-11

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455 ,  C01G39/06 ,  G01N30/72

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20200340114A1

公开(公告)日：2020-10-29

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US09765431B2

公开(公告)日：2017-09-19

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/50 ,  C23C16/40

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.