公开(公告)号：US20220178023A1

公开(公告)日：2022-06-09

申请号：US17543023

申请日：2021-12-06

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Naoki Umehara ,  Yu Min Huang

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/505 ,  C23C16/56

Abstract: Methods and systems for forming a structure including silicon-carbon material and structures formed using the methods or systems are disclosed. Exemplary methods include providing a first gas to the reaction space, providing a silicon-carbon precursor to the reaction space, ceasing a flow of the silicon-carbon precursor to the reaction space, forming a first plasma within the reaction space to thereby deposit silicon-carbon material on a surface of the substrate, and optionally treating the silicon-carbon material with activated species to form treated silicon-carbon material.

公开(公告)号：US20230207308A1

公开(公告)日：2023-06-29

申请号：US18088041

申请日：2022-12-23

Applicant: ASM IP Holding B.V.

Inventor： Chie Kaneko ,  Ippei Yanagisawa ,  Yu Min Huang

IPC: H01L21/02

CPC classification number: H01L21/02216 ,  H01L21/02211 ,  H01L21/02274 ,  H01J37/32091

Abstract: Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.