公开(公告)号：US20220291590A1

公开(公告)日：2022-09-15

申请号：US17634309

申请日：2020-07-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing SU ,  Yana CHENG ,  Zchenxi LIN ,  Yi ZOU ,  Ddavit HARUTYUNYAN ,  Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Cornelis Johannes Henricus LAMBREGTS ,  Hadi YAGUBIZADE

IPC: G03F7/20

Abstract: A method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set including overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprising a difference between the predicted data and the de-corrected measured overlay data.

公开(公告)号：US20220276570A1

公开(公告)日：2022-09-01

申请号：US17633781

申请日：2020-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi RAHMAN ,  Cornelis Johannes Henricus LAMBREGTS ,  Wolfgang Helmut HENKE

IPC: G03F7/20

Abstract: A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

公开(公告)号：US20210080837A1

公开(公告)日：2021-03-18

申请号：US16954384

申请日：2018-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk RIJPSTRA ,  Cornelis Johannes Henricus LAMBREGTS ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Cédric Désiré GROUWSTRA ,  Chi-Fei NIEN ,  Weitian KOU ,  Chang-Wei CHEN ,  Pieter Gerardus Jacobus SMORENBERG

IPC: G03F7/20 ,  G05B19/404

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US20220365446A1

公开(公告)日：2022-11-17

申请号：US17874582

申请日：2022-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk RIJPSTRA ,  Cornelis Johannes Henricus LAMBREGTS ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Cédric Désiré GROUWSTRA ,  Chi-Fei NIEN ,  Weitian KOU ,  Chang-Wei CHEN ,  Pieter Gerardus Jacobus SMORENBERG

IPC: G03F7/20

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US20220236647A1

公开(公告)日：2022-07-28

申请号：US17635290

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Cornelis Johannes Henricus LAMBREGTS ,  Amir Bin ISMAIL ,  Rizvi RAHMAN ,  Allwyn BOUSTHEEN ,  Raheleh PISHKARI ,  Everhardus Cornelis MOS ,  Ekaterina Mikhailovna VIATKINA ,  Roy WERKMAN ,  Ralph BRINKHOF

IPC: G03F7/20

Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.