公开(公告)号：US10955744B2

公开(公告)日：2021-03-23

申请号：US16100269

申请日：2018-08-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Koen Van Witteveen ,  Wei-Chun Wang ,  Paul Jonathan Turner ,  Elliott Gerard McNamara ,  Giacomo Miceli

IPC: G03F7/20 ,  G03F1/36

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：US20190064653A1

公开(公告)日：2019-02-28

申请号：US16100269

申请日：2018-08-10

Applicant: ASML Netherlands B.V.

Inventor： Koen Van Witteveen ,  Wei-Chun Wang ,  Paul Jonathan Turner ,  Elliott Gerard Mc Namara ,  Giacomo Miceli

IPC: G03F1/36 ,  G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：US12124174B2

公开(公告)日：2024-10-22

申请号：US17438994

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Paul Jonathan Turner ,  Anagnostis Tsiatmas

IPC: G03F7/00

CPC classification number: G03F7/70633

Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method includes: obtaining inspection data including a plurality of sets of measurement data associated with a structure on the substrate or portion thereof (for example measurement pupils); and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on a degree to which the iterative mapping converges on a solution.