DETERMINING A MARK LAYOUT ACROSS A PATTERNING DEVICE OR SUBSTRATE

    公开(公告)号:US20220011683A1

    公开(公告)日:2022-01-13

    申请号:US17294503

    申请日:2019-10-21

    Abstract: A method for determining a layout of mark positions across a patterning device or substrate, the method including: obtaining a model configured to model data associated with measurements performed on the patterning device or substrate at one or more mark positions; obtaining an initial mark layout including initial mark positions; reducing the initial mark layout by removal of one or more mark positions to obtain a plurality of reduced mark layouts, each reduced mark layout obtained by removal of a different mark position from the initial mark layout; determining a model uncertainty metric associated with usage of the model for each reduced mark layout out of the plurality of reduced mark layouts; and selecting one or more reduced mark layouts based on its associated model uncertainty metric.

Patent Agency Ranking