MODEL BASED RECONSTRUCTION OF SEMICONDUCTOR STRUCTURES

    公开(公告)号:US20210097665A1

    公开(公告)日:2021-04-01

    申请号:US16982092

    申请日:2019-03-21

    Abstract: Methods and apparatuses for determining a property of a structure fabricated on a substrate, by: determining a measured characteristic from pixels of a measured pupil image of the structure, the measured characteristic having less information than the measured pupil image; generating an initial simulated characteristic corresponding to the measured characteristic and based on a candidate model of the structure; comparing the measured characteristic to the simulated characteristic in an iterative method until a difference therebetween is less than a coarse threshold; generating an initial simulated pupil image based on the coarse model as the candidate model; comparing at least a portion of the measured pupil image to at least a portion of the simulated pupil image in an iterative method until a difference therebetween is less than a fine threshold.

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