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公开(公告)号:US11029614B2
公开(公告)日:2021-06-08
申请号:US16318388
申请日:2017-06-22
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Frank Staals , Martin Jules Marie-Emile De Nivelle , Tanbir Hasan
IPC: G05B19/4097 , G03F9/00
Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.
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公开(公告)号:US11669020B2
公开(公告)日:2023-06-06
申请号:US17162017
申请日:2021-01-29
Applicant: ASML NETHERLANDS B.V.
Inventor: Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
CPC classification number: G03F7/70641 , G03F7/705 , G03F7/7065 , G03F7/70508 , G03F7/70541 , G03F9/7026
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
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公开(公告)号:US10908515B2
公开(公告)日:2021-02-02
申请号:US16468063
申请日:2017-11-28
Applicant: ASML NETHERLANDS B.V.
Inventor: Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
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