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Patent Agency Ranking
1.发明申请公开(公告)号：US20200151600A1
公开(公告)日：2020-05-14
申请号：US16673350
申请日：2019-11-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Wenjin Huang , Hongmei Li , Huina Xu , Bruno La Fontaine
Abstract: A method for determining a probabilistic model configured to predict a characteristic (e.g., defects, CD, etc.) of a pattern of a substrate subjected to a patterning process. The method includes obtaining a spatial map of a distribution of a residue corresponding to a characteristic of the pattern on the substrate, determining a zone of the spatial map based on a variation of the distribution of the residue within the spatial map, and determining the probabilistic model based on the zone and the distribution of the residue values or the values of the characteristic of the pattern on the substrate within the zone.
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公开(公告)号：US11669020B2
公开(公告)日：2023-06-06
申请号：US17162017
申请日：2021-01-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
CPC classification number: G03F7/70641 , G03F7/705 , G03F7/7065 , G03F7/70508 , G03F7/70541 , G03F9/7026
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
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公开(公告)号：US10908515B2
公开(公告)日：2021-02-02
申请号：US16468063
申请日：2017-11-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
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4.发明授权公开(公告)号：US11733613B2
公开(公告)日：2023-08-22
申请号：US16673350
申请日：2019-11-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Wenjin Huang , Hongmei Li , Huina Xu , Bruno La Fontaine
CPC classification number: G03F7/705 , G03F7/70616
Abstract: A method for determining a probabilistic model configured to predict a characteristic (e.g., defects, CD, etc.) of a pattern of a substrate subjected to a patterning process. The method includes obtaining a spatial map of a distribution of a residue corresponding to a characteristic of the pattern on the substrate, determining a zone of the spatial map based on a variation of the distribution of the residue within the spatial map, and determining the probabilistic model based on the zone and the distribution of the residue values or the values of the characteristic of the pattern on the substrate within the zone.
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公开(公告)号：US11126092B2
公开(公告)日：2021-09-21
申请号：US15774583
申请日：2016-10-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Lin Lee Cheong , Wenjin Huang , Bruno La Fontaine
IPC: G03F7/20 , G05B19/4097
Abstract: A method including: determining a value of a characteristic of a patterning process or a product thereof, at a current value of a processing parameter; determining whether a termination criterion is met by the value of the characteristic; if the termination criterion is not met, determining a new value of the processing parameter from the current value of the processing parameter and a prior value of the processing parameter, and setting the current value to the new value and repeating the determining steps; and if the termination criterion is met, providing the current value of the processing parameter as an approximation of a value of the processing parameter at which the characteristic has a target value.
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