CONFIGURATION OF PATTERNING PROCESS
    1.
    发明公开

    公开(公告)号:US20240119212A1

    公开(公告)日:2024-04-11

    申请号:US18277014

    申请日:2022-02-25

    CPC classification number: G06F30/392 G06F30/398 G06F2119/02

    Abstract: Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and the first set of contours. The second patterning process is associated with one or more design variables (e.g., illumination, mask pattern) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.

    SYSTEMS AND METHODS FOR OPTIMIZING LITHOGRAPHIC DESIGN VARIABLES USING IMAGE-BASED FAILURE RATE MODEL

    公开(公告)号:US20250028255A1

    公开(公告)日:2025-01-23

    申请号:US18714728

    申请日:2022-11-23

    Abstract: A method for determining values of design variables of a lithographic process based on a predicted failure rate for printing a target pattern on a substrate using a lithographic apparatus. The method includes obtaining an image corresponding to a target pattern to be printed on a substrate using a lithographic apparatus, wherein the image is generated based on a set of values of design variables of the lithographic apparatus or a lithographic process; determining image properties, the image properties representative of a pattern printed on the substrate, the pattern corresponding to the target pattern; predicting a failure rate in printing the pattern on the substrate based on the image properties; and determining a specified value of a specified design variable based on the failure rate, the specified value to be used in the lithographic process to print the target pattern on the substrate.

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