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公开(公告)号：US20230333483A1
公开(公告)日：2023-10-19
申请号：US18027093
申请日：2021-09-24
发明人： Xingyue PENG , Duan-Fu Stephen HSU
IPC分类号： G03F7/20
CPC分类号： G03F7/70558 , G03F7/705 , G03F7/70125
摘要： A method for source mask optimization to increase scanner throughput for a patterning process is described. The method includes computing a multi-variable cost function of design variables that are representative of characteristics of the patterning process. The design variables may include (a) an illumination variable that is characteristic of an illumination system, and (b) a design layout variable that is characteristic of a design layout. The multi-variable cost function may be a function of a throughput of the patterning process. The method further includes reconfiguring the characteristics of the patterning process by adjusting the design variables until a predefined termination condition is satisfied.
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2.发明申请公开(公告)号：US20220229374A1
公开(公告)日：2022-07-21
申请号：US17605358
申请日：2020-03-26
IPC分类号： G03F7/20
摘要： Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.
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公开(公告)号：US20220066327A1
公开(公告)日：2022-03-03
申请号：US17415101
申请日：2019-12-12
发明人： Johannes Jacobus Matheus BASELMANS , Duan-Fu Stephen HSU , Willem Jan BOUMAN , Frank Jan TIMMERMANS , Marie-Claire VAN LARE
IPC分类号： G03F7/20
摘要： Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.
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公开(公告)号：US20190285991A1
公开(公告)日：2019-09-19
申请号：US16428373
申请日：2019-05-31
摘要： Disclosed herein are several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift , tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing assist features onto or adjusting positions and/or shapes existing assist features in the portion. Adjusting the illumination source and/or the assist features may be by an optimization algorithm.
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公开(公告)号：US20240319581A1
公开(公告)日：2024-09-26
申请号：US18579176
申请日：2022-07-15
发明人： Duan-Fu Stephen HSU , Jialei TANG , Dezheng SUN
CPC分类号： G03F1/36 , G03F7/70508 , G03F7/706 , G03F7/70683 , G03F7/706831 , G03F7/706837
摘要： Generating a design (e.g., a metrology mark or a device pattern to be printed on a substrate) that is optimized for aberration sensitivity related to an optical system of a lithography system. A metrology mark (e.g., a transmission image sensor (TIS) mark) is optimized for a given device pattern by matching the aberration sensitivity of the metrology mark with the aberration sensitivity of the device pattern. A cost function that includes the aberration sensitivity difference between the metrology mark and the device pattern is evaluated based on an imaging characteristic response (e.g., a critical dimension (CD) response to focus) obtained from a simulation model that simulates lithography. The cost function is evaluated by modifying the metrology mark until the cost function is minimized and an optimized metrology mark is output when the cost function is minimized.
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公开(公告)号：US20240045341A1
公开(公告)日：2024-02-08
申请号：US18266246
申请日：2021-12-09
申请人： ASML NETHERLANDS B.V. , Cymer, LLC
发明人： Willard Earl CONLEY , Duan-Fu Stephen HSU , Joshua Jon THORNES , Johannes Jacobus Matheus BASELMANS
CPC分类号： G03F7/70575 , G03F7/70583 , G03F7/70025 , G03F7/2004
摘要： A method for improving a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus. The method includes computing a multi-variable cost function that is a function of: (i) a plurality of design variables that affect characteristics of the lithographic process and (ii) a radiation bandwidth of a radiation source of the lithographic apparatus; and reconfiguring one or more of the characteristics (e.g., EPE, image contrast, resist, etc.) of the lithographic process by adjusting one or more of the design variables (e.g., source, mask layout, bandwidth, etc.) until a termination condition is satisfied. The termination condition includes a speckle characteristic (e.g., a speckle contrast) maintained within a speckle specification associated with the radiation source and also maintaining an image contrast associated with the lithographic process within a desired range. The speckle characteristic being a function of the radiation bandwidth.
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公开(公告)号：US20230010700A1
公开(公告)日：2023-01-12
申请号：US17780287
申请日：2020-11-05
申请人： CYMER, LLC , ASML NETHERLANDS B.V.
IPC分类号： G03F7/20
摘要： Enhancing target features of a pattern imaged onto a substrate. This may include adding one or more assist features to a patterning device pattern in one or more locations adjacent to one or more target features in the patterning device pattern. The one or more assist features are added based on two or more different focus positions in the substrate. This can also include shifting the patterning device pattern and/or a design layout based on the two or more different focus positions and the one or more added assist features. This may be useful for improving across slit asymmetry. Adding the one or more assist features to the pattern and shifting the pattern and/or the design layout enhances the target features by reducing a shift caused by across slit asymmetry for a slit of a multifocal lithographic imaging apparatus. This may reduce the shift across an entire imaging field.
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公开(公告)号：US20220390832A1
公开(公告)日：2022-12-08
申请号：US17776728
申请日：2020-11-18
摘要： A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.
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公开(公告)号：US20220334493A1
公开(公告)日：2022-10-20
申请号：US17638899
申请日：2020-08-21
发明人： Jingjing LIU , Duan-Fu Stephen HSU , Xingyue PENG
IPC分类号： G03F7/20 , G05B19/4099
摘要： A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.
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公开(公告)号：US20220179325A1
公开(公告)日：2022-06-09
申请号：US17436305
申请日：2020-02-20
发明人： Duan-Fu Stephen HSU , Dezheng SUN
IPC分类号： G03F7/20
摘要： A diffraction pattern guided source mask optimization (SMO) method that includes determining a source variable region from a diffraction pattern. The source variable region corresponds to one or more areas of a diffraction pattern in a pupil for which one or more pupil variables are to be adjusted. The source variable region in the diffraction pattern includes a plurality of pixels in an image of a selected region of interest in the diffraction pattern. Determining the source variable region can include binarization of the plurality of pixels in the image such that individual pixels are either included in the source variable region or excluded from the source variable region. The method can include adjusting the one or more pupil variables for the one or more areas of the pupil that correspond to the source variable region; and rendering a final pupil based on the adjusted one or more pupil variables.
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