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1.发明授权公开(公告)号：US10477662B2
公开(公告)日：2019-11-12
申请号：US16434367
申请日：2019-06-07
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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2.发明授权公开(公告)号：US10362664B2
公开(公告)日：2019-07-23
申请号：US15887935
申请日：2018-02-02
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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公开(公告)号：US20210063899A1
公开(公告)日：2021-03-04
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue MA
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US11347154B2
公开(公告)日：2022-05-31
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US12189313B2
公开(公告)日：2025-01-07
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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Patent Agency Ranking
公开(公告)号：US20220179328A1
公开(公告)日：2022-06-09
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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7.发明授权公开(公告)号：US09888554B2
公开(公告)日：2018-02-06
申请号：US15003385
申请日：2016-01-21
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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8.发明申请公开(公告)号：US20170215265A1
公开(公告)日：2017-07-27
申请号：US15003385
申请日：2016-01-21
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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公开(公告)号：US20250085643A1
公开(公告)日：2025-03-13
申请号：US18962837
申请日：2024-11-27
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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10.发明授权公开(公告)号：US11013096B2
公开(公告)日：2021-05-18
申请号：US16594995
申请日：2019-10-07
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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