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公开(公告)号：US11690159B2
公开(公告)日：2023-06-27
申请号：US17284060
申请日：2019-10-25
Applicant: ASML Netherlands B.V.
Inventor： Bob Rollinger , Georgiy Olegovich Vaschenko , Chirag Rajyaguru , Alexander Igorevich Ershov , Joshua Mark Lukens , Mathew Cheeran Abraham
IPC: H05G2/00
CPC classification number: H05G2/006
Abstract: Disclosed is a system for generating EUV radiation in which current flowing through target material in the orifice 320 of a nozzle in a droplet generator is controlled by providing alternate lower impedance paths for the current and/or by limiting a high frequency component of a drive signal applied to the droplet generator.
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公开(公告)号：US20210392733A1
公开(公告)日：2021-12-16
申请号：US17284060
申请日：2019-10-25
Applicant: ASML Netherlands B.V.
Inventor： Bob Rollinger , Georgiy Olegovich Vaschenko , Chirag Rajyaguru , Alexander Igorevich Ershov , Joshua Mark Lukens , Mathew Cheeran Abraham
IPC: H05G2/00
Abstract: Disclosed is a system for generating EUV radiation in which current flowing through target material in the orifice 320 of a nozzle in a droplet generator is controlled by providing alternate lower impedance paths for the current and/or by limiting a high frequency component of a drive signal applied to the droplet generator.
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3.发明授权公开(公告)号：US09888554B2
公开(公告)日：2018-02-06
申请号：US15003385
申请日：2016-01-21
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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Patent Agency Ranking
4.发明申请公开(公告)号：US20170215265A1
公开(公告)日：2017-07-27
申请号：US15003385
申请日：2016-01-21
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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5.发明授权公开(公告)号：US10477662B2
公开(公告)日：2019-11-12
申请号：US16434367
申请日：2019-06-07
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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6.发明授权公开(公告)号：US10362664B2
公开(公告)日：2019-07-23
申请号：US15887935
申请日：2018-02-02
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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7.发明授权公开(公告)号：US11013096B2
公开(公告)日：2021-05-18
申请号：US16594995
申请日：2019-10-07
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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8.发明申请公开(公告)号：US20180160517A1
公开(公告)日：2018-06-07
申请号：US15887935
申请日：2018-02-02
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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