公开(公告)号：US20160170887A1

公开(公告)日：2016-06-16

申请号：US14569175

申请日：2014-12-12

Applicant: Advanced Micro Devices, Inc.

Inventor： Syed Ali R. JAFRI ,  Yasuko ECKERT ,  Srilatha MANNE ,  Mithuna S. THOTTETHODI ,  Gabriel H. LOH

IPC: G06F12/08 ,  G06F12/12

CPC classification number: G06F12/0833 ,  G06F12/0868 ,  G06F12/0871 ,  G06F12/0891 ,  G06F12/121 ,  G06F12/126 ,  G06F12/128 ,  G06F2212/62 ,  Y02D10/13

Abstract: To efficiently transfer of data from a cache to a memory, it is desirable that more data corresponding to the same page in the memory be loaded in a line buffer. Writing data to a memory page that is not currently loaded in a row buffer requires closing an old page and opening a new page. Both operations consume energy and clock cycles and potentially delay more critical memory read requests. Hence it is desirable to have more than one write going to the same DRAM page to amortize the cost of opening and closing DRAM pages. A desirable approach is batch write backs to the same DRAM page by retaining modified blocks in the cache until a sufficient number of modified blocks belonging to the same memory page are ready for write backs.

Abstract translation: 为了有效地将数据从高速缓存传输到存储器，期望将与存储器中的相同页面相对应的更多数据加载到行缓冲器中。 将数据写入当前未加载到行缓冲区的内存页面时，需要关闭旧页面并打开新页面。 两种操作都消耗能量和时钟周期，并可能延迟更多关键的存储器读取请求。 因此，期望具有多于一个写入同一DRAM页面的写入以分摊打开和关闭DRAM页面的成本。 期望的方法是通过将修改的块保留在高速缓存中来批量回写到相同的DRAM页面，直到属于同一存储器页面的足够数量的修改的块准备好回写。