公开(公告)号：US20230268314A1

公开(公告)日：2023-08-24

申请号：US17676094

申请日：2022-02-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shan-Bo WANG ,  Chin-Li KAO ,  An-Hsuan HSU

IPC: H01L23/00 ,  H01L25/10

CPC classification number: H01L24/81 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/105 ,  H01L23/49816 ,  H01L2224/11849 ,  H01L2224/14505 ,  H01L2224/17505 ,  H01L2224/81097 ,  H01L2224/81211 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2224/81935 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058

Abstract: A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.