Multi-stage overload protection scheme for pipeline analog-to-digital converters

    公开(公告)号:US09893737B1

    公开(公告)日:2018-02-13

    申请号:US15406077

    申请日:2017-01-13

    Applicant: Apple Inc.

    CPC classification number: H03M1/124 H03K5/08 H03K5/24

    Abstract: An apparatus includes a series of analog-to-digital converter (ADC) stages and a comparison circuit coupled to a first ADC stage. The first ADC stage may be configured to compare an input signal to one or more conversion thresholds to generate a result. The first ADC stage may also be configured to generate an output signal based on a value of the result. In response to an assertion of a reset signal, the first ADC stage may be configured to set a level of the output signal voltage to a particular voltage. The comparison circuit may be configured to assert the reset signal in response to a determination that the input signal voltage exceeds an operating range defined by an upper overload threshold voltage and a lower overload threshold voltage.

    Precision half cell for sub-FEMTO unit cap and capacitive DAC architecture in SAR ADC
    4.
    发明授权
    Precision half cell for sub-FEMTO unit cap and capacitive DAC architecture in SAR ADC 有权
    精密半单元,用于SAR ADC中的子FEMTO单元盖和电容DAC架构

    公开(公告)号:US09418788B2

    公开(公告)日:2016-08-16

    申请号:US14643478

    申请日:2015-03-10

    Applicant: Apple Inc.

    CPC classification number: H01G4/01 H01G4/129 H01G4/228 H01G4/38 H03M1/468

    Abstract: A capacitive device is disclosed, including a first conductor formed on a lower metal layer and coupled to a first terminal. A second conductor is formed on an upper metal layer and a plurality of wires is partitioned into groups, each group including one wire from a respective metal layer. First and second wires of each group are coupled to a second terminal. A third wire of each group, adjacent to the first wire, is coupled to the first conductor. A fourth wire of each group, adjacent to the second wire, is coupled to the second conductor. Fifth wires of a first subset of the groups are coupled to the second conductor and fifth wires of a second subset of the groups are coupled to the first conductor. The fifth wire of each group is adjacent to the first wire and the second wire.

    Abstract translation: 公开了一种电容器件,包括形成在下金属层上并耦合到第一端子的第一导体。 第二导体形成在上金属层上,并且多根导线分成一组,每组包括来自相应金属层的一根导线。 每组的第一和第二导线耦合到第二端子。 与第一导线相邻的每个组的第三线耦合到第一导体。 与第二导线相邻的每组的第四线耦合到第二导体。 组的第一子集的第五线耦合到第二导体,并且组的第二子集的第五线耦合到第一导体。 每组的第五根线与第一线和第二线相邻。

    PRECISION HALF CELL FOR SUB-FEMTO UNIT CAP AND CAPACITIVE DAC ARCHITECTURE IN SAR ADC
    5.
    发明申请
    PRECISION HALF CELL FOR SUB-FEMTO UNIT CAP AND CAPACITIVE DAC ARCHITECTURE IN SAR ADC 有权
    SAR ADC中的子阱单元CAP和电容DAC架构的精密半导体

    公开(公告)号:US20150263754A1

    公开(公告)日:2015-09-17

    申请号:US14643478

    申请日:2015-03-10

    Applicant: Apple Inc.

    CPC classification number: H01G4/01 H01G4/129 H01G4/228 H01G4/38 H03M1/468

    Abstract: A capacitive device is disclosed, including a first conductor formed on a lower metal layer and coupled to a first terminal. A second conductor is formed on an upper metal layer and a plurality of wires is partitioned into groups, each group including one wire from a respective metal layer. First and second wires of each group are coupled to a second terminal. A third wire of each group, adjacent to the first wire, is coupled to the first conductor. A fourth wire of each group, adjacent to the second wire, is coupled to the second conductor. Fifth wires of a first subset of the groups are coupled to the second conductor and fifth wires of a second subset of the groups are coupled to the first conductor. The fifth wire of each group is adjacent to the first wire and the second wire.

    Abstract translation: 公开了一种电容器件,包括形成在下金属层上并耦合到第一端子的第一导体。 第二导体形成在上金属层上,并且多根导线分成一组,每组包括来自相应金属层的一根导线。 每组的第一和第二导线耦合到第二端子。 与第一导线相邻的每个组的第三线耦合到第一导体。 与第二导线相邻的每组的第四线耦合到第二导体。 组的第一子集的第五条线耦合到第二导体,并且组的第二子集的第五条线耦合到第一导体。 每组的第五根线与第一线和第二线相邻。

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