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1.发明授权Precision half cell for sub-FEMTO unit cap and capacitive DAC architecture in SAR ADC 有权精密半单元，用于SAR ADC中的子FEMTO单元盖和电容DAC架构公开(公告)号：US09418788B2
公开(公告)日：2016-08-16
申请号：US14643478
申请日：2015-03-10
Applicant: Apple Inc.
Inventor： Vijay Srinivas , Mansour Keramat , Yuan-Ju Chao
Abstract: A capacitive device is disclosed, including a first conductor formed on a lower metal layer and coupled to a first terminal. A second conductor is formed on an upper metal layer and a plurality of wires is partitioned into groups, each group including one wire from a respective metal layer. First and second wires of each group are coupled to a second terminal. A third wire of each group, adjacent to the first wire, is coupled to the first conductor. A fourth wire of each group, adjacent to the second wire, is coupled to the second conductor. Fifth wires of a first subset of the groups are coupled to the second conductor and fifth wires of a second subset of the groups are coupled to the first conductor. The fifth wire of each group is adjacent to the first wire and the second wire.
Abstract translation: 公开了一种电容器件，包括形成在下金属层上并耦合到第一端子的第一导体。 第二导体形成在上金属层上，并且多根导线分成一组，每组包括来自相应金属层的一根导线。 每组的第一和第二导线耦合到第二端子。 与第一导线相邻的每个组的第三线耦合到第一导体。 与第二导线相邻的每组的第四线耦合到第二导体。 组的第一子集的第五线耦合到第二导体，并且组的第二子集的第五线耦合到第一导体。 每组的第五根线与第一线和第二线相邻。
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2.发明申请PRECISION HALF CELL FOR SUB-FEMTO UNIT CAP AND CAPACITIVE DAC ARCHITECTURE IN SAR ADC 有权SAR ADC中的子阱单元CAP和电容DAC架构的精密半导体公开(公告)号：US20150263754A1
公开(公告)日：2015-09-17
申请号：US14643478
申请日：2015-03-10
Applicant: Apple Inc.
Inventor： Vijay Srinivas , Mansour Keramat , Yuan-Ju Chao
Abstract: A capacitive device is disclosed, including a first conductor formed on a lower metal layer and coupled to a first terminal. A second conductor is formed on an upper metal layer and a plurality of wires is partitioned into groups, each group including one wire from a respective metal layer. First and second wires of each group are coupled to a second terminal. A third wire of each group, adjacent to the first wire, is coupled to the first conductor. A fourth wire of each group, adjacent to the second wire, is coupled to the second conductor. Fifth wires of a first subset of the groups are coupled to the second conductor and fifth wires of a second subset of the groups are coupled to the first conductor. The fifth wire of each group is adjacent to the first wire and the second wire.
Abstract translation: 公开了一种电容器件，包括形成在下金属层上并耦合到第一端子的第一导体。 第二导体形成在上金属层上，并且多根导线分成一组，每组包括来自相应金属层的一根导线。 每组的第一和第二导线耦合到第二端子。 与第一导线相邻的每个组的第三线耦合到第一导体。 与第二导线相邻的每组的第四线耦合到第二导体。 组的第一子集的第五条线耦合到第二导体，并且组的第二子集的第五条线耦合到第一导体。 每组的第五根线与第一线和第二线相邻。
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