公开(公告)号：US20240420934A1

公开(公告)日：2024-12-19

申请号：US18209711

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Soman ,  Yanze Wu ,  Zeqing Shen ,  Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Siyao Wang ,  Keith Tatseun Wong ,  Lakmal C. Kalutarage

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include methods for nonconformally building up silicon-and-oxygen-containing material where the top of the feature preferentially fills at a slower rate as compared to the bottom of the feature. Such methods may include iterative nonconformal etching operations and/or iterative nonconformal inhibition operations. For example, after building up a layer comprising silicon-and-oxygen-containing material, the layer may be nonconformally etched before building up another layer comprising silicon-and-oxygen-containing material. In another example, in the building up of the layer, an inhibitor may be introduced preferentially at and near the top of the features to provide nonconformal buildup of the silicon-and-oxygen-containing material.

公开(公告)号：US20240420952A1

公开(公告)日：2024-12-19

申请号：US18209700

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Soman ,  Supriya Ghosh ,  Yanze Wu ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/321

Abstract: Exemplary methods of semiconductor processing may include iteratively repeating a deposition cycle several times on a substrate disposed within a processing region of a semiconductor processing chamber. Each deposition cycle may include depositing a silicon-containing material on the substrate and exposing the silicon-containing material to a first oxygen plasma to convert the silicon-containing material to a silicon-and-oxygen-containing material. After the iterative repeating of the deposition cycle, the method may include performing a densification operation by exposing the silicon-and-oxygen-containing material to a second oxygen plasma to produce a densified silicon-and-oxygen-containing material where the quality of the densified silicon-and-oxygen-containing material is greater than the silicon-and-oxygen-containing material. The method may further include iteratively repeating the iteratively repeated deposition cycles and the densification operation several times.