公开(公告)号：US20220277936A1

公开(公告)日：2022-09-01

申请号：US17625179

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Yogita PAREEK ,  Darshan THAKARE ,  Prerna Sonthalia GORADIA ,  Ankur KADAM ,  Kevin A. PAPKE

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/56 ,  C23C16/50

Abstract: The present disclosure relates to protective multilayer coatings for processing clumbers and processing clumber components. In one embodiment, a multilayer protean e coating includes a metal nitride layer and an oxide layer disposed thereon. In one embodiment, the multilayer protective coating further includes an oxynitride interlayer and/or an oxy fluoride layer. The multilayer protective coating may be formed on a metal alloy or ceramic substrate, such as a processing clumber or a processing clumber component used in tire field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, the metal nitride layer and the oxide layer are deposited on the substrate by atomic layer deposition.

公开(公告)号：US20200283897A1

公开(公告)日：2020-09-10

申请号：US16800310

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Nitin DEEPAK ,  Suresh Chand SETH ,  Prerna Sonthalia GORADIA ,  Geetika BAJAJ ,  Darshan THAKARE ,  Jennifer Y. SUN ,  Gayatri NATU

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/40 ,  C23C22/34

Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

公开(公告)号：US20240026527A1

公开(公告)日：2024-01-25

申请号：US18224455

申请日：2023-07-20

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Supriya GHOSH ,  Susmit Singha ROY ,  Darshan THAKARE ,  Gopi Chandran RAMACHANDRAN ,  Bhaskar Jyoti BHUYAN ,  Abhijit B. MALLICK

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56

CPC classification number: C23C16/045 ,  C23C16/30 ,  C23C16/56

Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.