公开(公告)号：US20170056935A1

公开(公告)日：2017-03-02

申请号：US14839857

申请日：2015-08-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Ramesh GOPALAN ,  Yogita PAREEK ,  Jianqi WANG ,  Sio On LO ,  Kevin A. PAPKE

IPC: B08B3/08 ,  B08B3/10 ,  B08B3/12

CPC classification number: B08B3/102 ,  B08B3/10 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0041 ,  C11D11/0047 ,  C11D11/007

Abstract: Embodiment disclosed herein generally relate to a method for removing aluminum fluoride contamination from semiconductor processing equipment. A method for cleaning semiconductor processing equipment is disclosed herein. The method includes maintaining a container of water at a temperature of between 50 degrees Celsius and 100 degrees Celsius and soaking a semiconductor processing equipment having surface contamination comprising aluminum fluoride in the water, wherein the semiconductor processing equipment is comprised of a material having a solubility directly related to the temperature of the water.

Abstract translation: 本文公开的实施方案一般涉及从半导体加工设备中除去氟化铝污染物的方法。 本文公开了一种用于清洁半导体处理设备的方法。 该方法包括将水容器保持在50摄氏度和100摄氏度之间的温度，并将具有包含氟化铝的表面污染物的半导体加工设备浸入水中，其中半导体加工设备由具有直接溶解度的材料构成 与水的温度有关。

公开(公告)号：US20180061617A1

公开(公告)日：2018-03-01

申请号：US15663124

申请日：2017-07-28

Applicant: Applied Materials, Inc.

Inventor： Jianqi WANG ,  Yogita PAREEK ,  Julia BAUWIN ,  Kevin A. PAPKE

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01J37/32504 ,  C23C16/40 ,  C23C16/56 ,  H01J37/32477 ,  H01J37/32495 ,  H01J2237/0213 ,  H01J2237/334 ,  H01L21/67069

Abstract: Implementations of the present disclosure provide a chamber component for use in a processing chamber. The chamber component includes a body for use in a plasma processing chamber, a barrier oxide layer formed on at least a portion of an exposed surface of the body, the barrier oxide layer having a density of about 2 gm/cm3 or greater, and an aluminum oxyfluoride layer formed on the barrier oxide layer, the aluminum oxyfluoride layer having a thickness of about 2 nm or greater.

公开(公告)号：US20190070639A1

公开(公告)日：2019-03-07

申请号：US15784963

申请日：2017-10-16

Applicant: Applied Materials, Inc.

Inventor： Roy C. NANGOY ,  Allen L. D'AMBRA ,  Kevin A. PAPKE

IPC: B08B3/04

Abstract: Disclosed herein is an apparatus for cleaning a process kit comprising a body, a cleaning source, and a control system. The body is formed from multiple modules configured to couple to, and receive therein, a process kit part. A plurality of cleaning agents may be sequentially delivered to the body in order to remove the particles disposed on the process part.

公开(公告)号：US20180224412A1

公开(公告)日：2018-08-09

申请号：US15429038

申请日：2017-02-09

Applicant: Applied Materials, Inc.

Inventor： Tasnuva TABASSUM ,  Mats LARSSON ,  Kevin A. PAPKE

IPC: G01N33/00 ,  G01N33/20

CPC classification number: G01N33/005 ,  G01N33/2025 ,  G01N2033/0095 ,  G01N2033/0096

Abstract: Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. The hollow tube has an open bottom end configured for sealingly engaging a coating layer of the semiconductor chamber component. The sensor is configured to detect the presence of a gaseous byproduct of a reaction between a reagent disposed in the hollow tube and a base layer disposed under the coating layer. The processing system is configured to determine exposure of the base layer through the coating layer in response to information about the presence of the gaseous byproduct. In another embodiment, the processing system is communicatively coupled to each sensor of a plurality of test stations.

公开(公告)号：US20170260639A1

公开(公告)日：2017-09-14

申请号：US15452062

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Yogita PAREEK ,  Laksheswar KALITA ,  Geetika BAJAJ ,  Kevin A. PAPKE ,  Ankur KADAM ,  Bipin THAKUR ,  Yixing LIN ,  Dmitry LUBOMIRSKY ,  Prerna A. GORADIA

IPC: C25D3/44 ,  C25D5/50 ,  H01L21/67 ,  C25D5/18

CPC classification number: C25D3/44 ,  C25D3/66 ,  C25D5/022 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D11/04 ,  H01L21/67023

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

公开(公告)号：US20160319428A1

公开(公告)日：2016-11-03

申请号：US14750322

申请日：2015-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Balasubramanian RAMACHANDRAN ,  Shih Chung CHEN ,  Kevin A. PAPKE ,  Lei ZHOU ,  Jing ZHOU

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45565

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300μ-in Ra, or an emissivity (ε) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，处理室包括：室主体和限定处理室内的处理容积的盖组件; 设置在所述处理体积内以支撑衬底的衬底支撑件; 以及具有第一表面的喷头，所述第一表面包括与所述基板支撑件相对并平行设置的多个气体分配孔，其中所述喷头由铝制成并且包括沿着所述第一表面的氧化铝涂层，其中所述氧化铝涂层的厚度为 约0.0001至约0.002英寸。 在一些实施例中，喷头还可以具有在Ra中约10至约300μ的粗糙度或约0.20至约0.80的发射率（ε）中的至少一种。 处理室可以是热原子层沉积（ALD）室。

公开(公告)号：US20230167543A1

公开(公告)日：2023-06-01

申请号：US18101944

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/513 ,  C23C16/44 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195

CPC classification number: C23C16/0281 ,  C23C16/405 ,  C23C16/56 ,  C23C16/513 ,  C23C16/4404 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195 ,  Y10S156/914 ,  Y10T428/1317 ,  Y10T428/12743 ,  Y10T428/1259 ,  Y10T428/12667 ,  Y10T428/12764 ,  Y10T428/12604 ,  Y10T428/31504 ,  Y10T428/12736 ,  Y10T428/1266 ,  Y10T428/12597 ,  Y10T428/12611 ,  Y10T428/31678 ,  C04B2235/96

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20200013589A1

公开(公告)日：2020-01-09

申请号：US16401871

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan BALARAMAN ,  Sathyanarayana BINDIGANAVALE ,  Rajasekhar PATIBANDLA ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR ,  Mats LARSSON ,  Kevin A. PAPKE ,  William M. LU

IPC: H01J37/32 ,  H01L21/687 ,  C23C14/16 ,  C23C14/06 ,  C23C16/06 ,  C23C16/34

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：US20180330929A1

公开(公告)日：2018-11-15

申请号：US15591908

申请日：2017-05-10

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao ARNEPALLI ,  Bipin THAKUR ,  Kevin A. PAPKE ,  Yogita PAREEK

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32449 ,  H01J37/32522

Abstract: Embodiments of the disclosure generally relate to methods for removal of accumulated process byproducts from components of a semiconductor processing chamber. In one embodiment of the disclosure, a method for cleaning components within a processing chamber is disclosed. The method includes heating the components within the processing chamber to a temperature between about 150-300 degrees Celsius, exposing the components of the chamber to one or more precursor gases and removing a product of a reaction between a fluorine-based compound disposed on the components and the one or more precursor gases. The one or more precursor gases include trimethyl aluminum or tin acetylacetonate.

公开(公告)号：US20180105701A1

公开(公告)日：2018-04-19

申请号：US15784058

申请日：2017-10-13

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Yogita PAREEK ,  Jianqi WANG ,  Kevin A. PAPKE

IPC: C09D5/08 ,  B05D1/18 ,  C09D1/00 ,  H01L21/67 ,  H01J37/32

CPC classification number: C09D5/08 ,  B05D1/18 ,  C09D1/00 ,  H01J37/32495 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

Abstract: Embodiments of the disclosure provide a chamber component for use in a plasma processing chamber apparatus. The chamber component may include a coating layer that provides a fluorine-rich surface. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes a body having an outer layer comprising yttria having a coating layer formed thereon, wherein the coating layer comprises a yttrium fluoride containing material.