公开(公告)号：US20180218902A1

公开(公告)日：2018-08-02

申请号：US15882204

申请日：2018-01-29

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Abhijit Basu MALLICK ,  Susmit Singha ROY ,  Takehito KOSHIZAWA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/32 ,  C23C16/34 ,  C23C16/50

CPC classification number: H01L21/0332 ,  C23C16/0272 ,  C23C16/32 ,  C23C16/342 ,  C23C16/345 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber. The method further includes forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber. The method further includes forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20240290612A1

公开(公告)日：2024-08-29

申请号：US18409549

申请日：2024-01-10

Applicant: Applied Materials, Inc.

Inventor： Zeqing SHEN ,  Supriya GHOSH ,  Susmit Singha ROY ,  Abhijit Basu MALLICK ,  Nitin K. INGLE

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02247 ,  H01L21/02271

Abstract: The present disclosure generally relates to methods for forming silicon nitride film layers on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber, depositing a first silicon film layer on a non-silicon oxide surface of the substrate for a time duration of about 1 to about minutes, nitriding the first silicon film layer to form a first silicon nitride film layer on the substrate, selectively depositing a second silicon film layer on the first silicon nitride film layer, and nitriding the second silicon film layer to form a second silicon nitride film layer disposed directly on the first silicon nitride film layer.

公开(公告)号：US20240145235A1

公开(公告)日：2024-05-02

申请号：US18495094

申请日：2023-10-26

Applicant: Applied Materials, Inc.

Inventor： Zeqing SHEN ,  Supriya GHOSH ,  Susmit Singha ROY ,  Abhijit B. MALLICK

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  H01L21/02164 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252

Abstract: The present disclosure generally relates to methods for forming silicon nitride layers and silicon nitride structures on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber; depositing a first silicon layer on the substrate and the at least one feature; nitriding the first silicon layer to form a first silicon nitride layer on the substrate and the at least one feature; selectively inhibiting silicon nucleation on a portion of the first silicon nitride layer to form an inhibited profile; selectively depositing a second silicon layer on the first silicon nitride layer in accordance with the inhibited profile; and nitriding the second silicon layer to form a second silicon nitride layer disposed directly on the first silicon nitride layer.

公开(公告)号：US20240026527A1

公开(公告)日：2024-01-25

申请号：US18224455

申请日：2023-07-20

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Supriya GHOSH ,  Susmit Singha ROY ,  Darshan THAKARE ,  Gopi Chandran RAMACHANDRAN ,  Bhaskar Jyoti BHUYAN ,  Abhijit B. MALLICK

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56

CPC classification number: C23C16/045 ,  C23C16/30 ,  C23C16/56

Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.

公开(公告)号：US20190080915A1

公开(公告)日：2019-03-14

申请号：US16120800

申请日：2018-09-04

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Yingli RAO ,  Srinivas GANDIKOTA

IPC: H01L21/285 ,  H01L21/321 ,  C23C16/06 ,  C23C16/34

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US20200083056A1

公开(公告)日：2020-03-12

申请号：US16682154

申请日：2019-11-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Yingli RAO ,  Srinivas GANDIKOTA

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L21/321 ,  C23C16/455 ,  C23C28/00 ,  C23C16/40 ,  C23C16/50 ,  H01L21/3205 ,  H01L27/11578

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US20180076032A1

公开(公告)日：2018-03-15

申请号：US15695180

申请日：2017-09-05

Applicant: Applied Materials, Inc.

Inventor： Jiarui WANG ,  Prashant Kumar KULSHRESHTHA ,  Eswaranand VENKATASUBRAMANIAN ,  Susmit Singha ROY ,  Kwangduk Douglas LEE

IPC: H01L21/033 ,  H01L21/02 ,  H01L27/11556 ,  H01L27/11582 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34

CPC classification number: H01L21/0332 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/342 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/67103 ,  H01L21/6831 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20170372953A1

公开(公告)日：2017-12-28

申请号：US15633366

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Kelvin CHAN ,  Hien Minh LE ,  Sanjay KAMATH ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Karthik JANAKIRAMAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28506 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/505 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76876 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20170352586A1

公开(公告)日：2017-12-07

申请号：US15175880

申请日：2016-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Susmit Singha ROY ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  H01L27/1157 ,  H01L23/522 ,  H01L27/11524 ,  H01L23/528 ,  H01L21/033 ,  H01L27/11582 ,  H01L27/11556

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming a hardmask layer that may be utilized to transfer patterns or features to a film stack with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming a hardmask layer on a substrate includes forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in a processing chamber, forming a transition layer comprising born and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.