公开(公告)号：US20230402286A1

公开(公告)日：2023-12-14

申请号：US17837958

申请日：2022-06-10

Applicant: Applied Materials, Inc.

Inventor： Daisuke SHIMIZU ,  Li LING ,  Hikaru WATANABE ,  Kenji TAKESHITA

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode disposed in the substrate support while the substrate is exposed to the plasma during a plurality of macro etch cycles. Each macro etch cycle includes a first macro etch period and a second macro etch period. The macro etch period includes a plurality of micro etch cycles. Each micro etch cycle has a bias power on (BPON) period and a bias power off (BPOFF) period, wherein a duration of the BPON period being less than a duration of the BPOFF period. Bias power is predominantly not applied to the electrode during the second macro etch period.