公开(公告)号：US20230402286A1

公开(公告)日：2023-12-14

申请号：US17837958

申请日：2022-06-10

Applicant: Applied Materials, Inc.

Inventor： Daisuke SHIMIZU ,  Li LING ,  Hikaru WATANABE ,  Kenji TAKESHITA

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode disposed in the substrate support while the substrate is exposed to the plasma during a plurality of macro etch cycles. Each macro etch cycle includes a first macro etch period and a second macro etch period. The macro etch period includes a plurality of micro etch cycles. Each micro etch cycle has a bias power on (BPON) period and a bias power off (BPOFF) period, wherein a duration of the BPON period being less than a duration of the BPOFF period. Bias power is predominantly not applied to the electrode during the second macro etch period.

公开(公告)号：US20210320012A1

公开(公告)日：2021-10-14

申请号：US16846869

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Shinichi KOSEKI ,  Sean S. KANG ,  Jairaj Joseph PAYYAPILLY ,  Hikaru WATANABE

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/033

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.