公开(公告)号：US20240014075A1

公开(公告)日：2024-01-11

申请号：US18206042

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis BREIL ,  Lisa MCGILL ,  Amritha RAMMOHAN ,  Shashank SHARMA

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/823871 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76889 ,  H01L21/76895

Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the mask covers an exposed surface of the second semiconductor region within the second opening, performing an amorphization ion implant process to amorphize an exposed surface of the first semiconductor region within the first opening, performing a removal process to remove the mask, performing a selective epitaxial deposition process, to epitaxially form a contact layer on the exposed surface of the second semiconductor region, and performing a recrystallization anneal process to recrystallize the amorphized surface of the first semiconductor region.

公开(公告)号：US20250151374A1

公开(公告)日：2025-05-08

申请号：US18887821

申请日：2024-09-17

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis BREIL ,  Lisa MCGILL ,  Manoj VELLAIKAL ,  Bocheng CAO ,  Pei LIU ,  Avgerinos V. GELATOS

IPC: H01L21/8238 ,  H01L23/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and/or a p-MOS cavity in an exposed surface of the p-MOS region, wherein the cavity shaping process is configured to increase the surface area of the exposed surface of the n-MOS region or the p-MOS region. In some embodiments, the method includes performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.