公开(公告)号：US20220310531A1

公开(公告)日：2022-09-29

申请号：US17214411

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Amirhasan Nourbakhsh ,  Lan Yu ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Tyler Sherwood ,  Siddarth Krishnan ,  Michael Jason Fronckowiak ,  Xing Chen

IPC: H01L23/00 ,  H01L21/311 ,  H01L21/308 ,  H01L21/304

Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.

公开(公告)号：US11830824B2

公开(公告)日：2023-11-28

申请号：US17214411

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Amirhasan Nourbakhsh ,  Lan Yu ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Tyler Sherwood ,  Siddarth Krishnan ,  Michael Jason Fronckowiak ,  Xing Chen

IPC: H01L23/00 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L23/562 ,  H01L21/304 ,  H01L21/3086 ,  H01L21/31111

Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.