公开(公告)号：US11081318B2

公开(公告)日：2021-08-03

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01L21/31 ,  H01J37/32 ,  C23C16/507 ,  C23C16/455 ,  C23C16/56

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

公开(公告)号：US20190189400A1

公开(公告)日：2019-06-20

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  C23C16/56

CPC classification number: H01J37/32385 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/507 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/3341

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

公开(公告)号：US11791190B2

公开(公告)日：2023-10-17

申请号：US17314714

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Mike Murtagh ,  Sanjeev Baluja

IPC: H01L21/683 ,  H02N13/00 ,  G01R27/26 ,  H01L21/67

CPC classification number: H01L21/6833 ,  G01R27/2605 ,  H01L21/67242 ,  H02N13/00

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.

公开(公告)号：US20210351060A1

公开(公告)日：2021-11-11

申请号：US17314714

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Mike Murtagh ,  Sanjeev Baluja

IPC: H01L21/683 ,  H01L21/67 ,  G01R27/26 ,  H02N13/00

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.