公开(公告)号：US20240363405A1

公开(公告)日：2024-10-31

申请号：US18634671

申请日：2024-04-12

Applicant: Tokyo Electron Limited

Inventor： Masato SAKAMOTO ,  Tadahiro ISHIZAKA

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  H01J37/32

CPC classification number: H01L21/76862 ,  C23C16/0227 ,  C23C16/06 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/32568 ,  H01L21/7685 ,  H01L21/76867 ,  H01L21/76877 ,  H01J2237/335

Abstract: Provided is a substrate processing method for processing a substrate including a metal layer, the method comprising: supplying a halogen-containing gas to the substrate and reducing a metal oxide film formed on a surface of the metal layer; and supplying a reducing gas to the substrate and decreasing a residue remaining on the metal layer by supplying the halogen-containing gas.

公开(公告)号：US20240355592A1

公开(公告)日：2024-10-24

申请号：US18138629

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny ,  Rene George

IPC: H01J37/32 ,  G06N3/084

CPC classification number: H01J37/32568 ,  G06N3/084 ,  H01J37/32348 ,  H01J37/32449 ,  H01J2237/032 ,  H01J2237/20214

Abstract: A plasma generating component for a process chamber includes a first pair of linear electrodes. Each electrode of the first pair of linear electrodes extends from a first edge of a plasma generating region of the plasma generating component to a second edge of the plasma generating region of the plasma generating component. Electrodes of the first pair of linear electrodes are substantially parallel. The plasma generating component further includes a second pair of linear electrodes, substantially parallel to the first pair of linear electrodes. The plasma generating component further includes a dielectric support to which the first pair of linear electrodes and the second pair of linear electrodes are secured.

公开(公告)号：US20240355587A1

公开(公告)日：2024-10-24

申请号：US18138733

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/3344

Abstract: Apparatus and methods for controlling the uniformity of a plasma formed using a radio frequency (RF) source power assembly that includes one or more resonant tuning circuits coupled to two or more electrodes disposed within a multi-electrode source assembly. Improved plasma uniformity control and reduced system cost are achieved by eliminating multiple RF generators and matches that power the multiple electrodes separately. Multiple frequencies may also be provided to multiple electrodes at the same time, which can include another cost savings when using a multi-frequency RF source assembly. Local plasma density and sheath voltage over a surface of a substrate are controlled with segmented electrodes disposed within the processing region of a plasma processing chamber. The ion flux and direction, as well as energetic electron flux towards the substrate, are controlled to address the plasma non-uniformity and global tilt during processing of a semiconductor substrate.

公开(公告)号：US12112920B2

公开(公告)日：2024-10-08

申请号：US17715453

申请日：2022-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon Jeong ,  Daebeom Lee ,  Juho Lee ,  Junghyun Cho

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32183 ,  H01J37/32568 ,  H01L21/3065

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

公开(公告)号：US20240331978A1

公开(公告)日：2024-10-03

申请号：US18740007

申请日：2024-06-11

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

Abstract: The disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source generates radio frequency power to generate plasma. The bias power source is connected to a bias electrode of the substrate support, and generates an electric bias. An edge ring mounted on the substrate support receives a part of the electric bias through an impedance adjuster or receives another electric bias. An outer ring extends outside the edge ring in a radial direction, and receives a part of the radio frequency power or other radio frequency power.

公开(公告)号：US12106939B2

公开(公告)日：2024-10-01

申请号：US18094020

申请日：2023-01-06

Applicant: Plasma Flow, LLC

Inventor： Garrett Hill

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32229 ,  H01J37/32568 ,  H05H1/4622 ,  H05H2245/10

Abstract: Plasma generators and methods of generating plasma are disclosed. Electrodes in a reaction zone are energized by a high voltage power source that is electrically insulated from the electrodes. A first conductor array, preferably a coil, is electrically coupled to the power source and electrically insulated from the electrodes. A second conductor array, preferably a coaxial coil nested within the first conductor array, is electrically coupled to the electrodes. Electromagnetic induction between the first conductor array and the second conductor array is used to energize the electrodes and generate a plasma in the reaction zone. One or more microwaves are further directed at the plasma to form microwave plasma, either in parallel or in series. Such plasmas are used to reform a hydrocarbon feedstock into low C hydrocarbons, carbon, or hydrogen. Plasma generators combining induction plasma with serial microwave plasmas are further contemplated.

公开(公告)号：US20240312762A1

公开(公告)日：2024-09-19

申请号：US18608701

申请日：2024-03-18

Applicant: Matthew Steele

Inventor： Matthew Steele

IPC: H01J37/32

CPC classification number: H01J37/32055 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32568

Abstract: A plasma generation apparatus, system, and method for processing a material is presented. The apparatus includes a housing element, a plasma reaction chamber, multiple electrode rings, and a power supply. The housing element extends cylindrically along a longitudinal axis. The plasma reaction chamber is defined by an inner surface of the housing element and is configured to generate an ionized plasma field. Multiple electrode rings are disposed within the plasma reaction chamber. Each of the electrode rings includes multiple electrodes such that the electrode rings form an arc path within the plasma reaction chamber. A power supply is coupled to the outer surface of the housing element. The power supply includes a plurality of primary coils and a secondary coil wound about the primary coils. A coil core is in contact with at least a portion of each of the primary coils.

公开(公告)号：US12094693B2

公开(公告)日：2024-09-17

申请号：US17521779

申请日：2021-11-08

Applicant: ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA

Inventor： Jiangtao Pei ,  Zengdi Lian ,  Rason Zuo ,  Dee Wu

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32568 ,  H01J37/32807 ,  H01L21/68735 ,  H01J37/3244 ,  H01J2237/024 ,  H01J2237/049

Abstract: Disclosed are a bottom electrode assembly, a plasma processing apparatus, and a method of replacing a focus ring, wherein the bottom electrode assembly comprises: a base for supporting a wafer to be processed; a focus ring provided surrounding the outer periphery of the base; a cover ring disposed beneath the focus ring, a plurality of recesses being arranged along the circumferential direction of the cover ring; moving blocks provided in the recesses, an inner top corner of each moving block being provided with a step, the step being configured to support part of the focus ring; and a drive device connected to the moving blocks to activate the moving blocks to drive the focus ring to move up and down. With the bottom electrode assembly, replacement of the focus ring can be performed without opening the process chamber.

公开(公告)号：US20240304453A1

公开(公告)日：2024-09-12

申请号：US18665377

申请日：2024-05-15

Applicant: ULVAC, INC.

Inventor： TAICHI SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC: H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

Abstract: The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOyαz; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

公开(公告)号：US20240297025A1

公开(公告)日：2024-09-05

申请号：US18647077

申请日：2024-04-26

Applicant: Tokyo Electron Limited

Inventor： Kota SENO ,  Fumiaki ARIYOSHI

IPC: H01J37/32

CPC classification number: H01J37/32605 ,  H01J37/32568 ,  H01J37/3288 ,  H01J37/32091

Abstract: A plasma processing system includes a plasma processing apparatus and a transfer device. The plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber and having a lower electrode; an upper electrode assembly disposed above the substrate support, and having an electrode support and a replaceable upper electrode plate disposed below the electrode support; and a lifter configured to move the replaceable upper electrode plate vertically between an upper position and a lower position inside the plasma processing chamber, and configured to fix the replaceable upper electrode plate to the electrode support when the replaceable upper electrode plate is in the upper position. The transfer device includes: a transfer chamber; and a transfer robot disposed inside the transfer chamber, and configured to transfer the replaceable upper electrode plate between the lower position inside the plasma processing chamber and the transfer chamber.