公开(公告)号：US20230361242A1

公开(公告)日：2023-11-09

申请号：US17736843

申请日：2022-05-04

Applicant: Applied Materials, Inc.

Inventor： Michel Khoury ,  Archana Kumar ,  Jeffrey W. Anthis ,  Ryan Ley ,  Alfredo Granados

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L33/0075

Abstract: A mesa etch may form the geometry of microLED structures. However, the mesa etch may induce defects in the microLED structures that decreases the efficiency of the microLEDs. To correct these defects, a dry etch process may be performed that incrementally removes the surface layers of the microLED structures with the defects. The dry etch may be configured to incrementally remove a small outer layer, and thus may preserve the overall shape of the microLED structures while leaving a smooth surface for the application of a dielectric layer. The dry etch process may include two steps that are repeatedly performed. A first gas may react with the surface to form a gallium compound layer, and a second gas may then selectively remove that layer. The dry etch may include plasma-based etches or reactive thermal etches.

公开(公告)号：US20250029835A1

公开(公告)日：2025-01-23

申请号：US18770960

申请日：2024-07-12

Applicant: Applied Materials, Inc.

Inventor： Ryan Ley ,  Archana Kumar ,  Michel El Khoury Maroun ,  Benjamin D. Briggs

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  H01J37/32

Abstract: Exemplary semiconductor processing methods may include performing a treatment operation on a substrate housed within a first processing region of a first semiconductor processing chamber. The methods may include providing a nitrogen-containing precursor to the first processing region. The methods may include forming plasma effluents of the nitrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the nitrogen-containing precursor. The contacting may nitride a surface of the substrate. The methods may include transferring the substrate from the first processing region of the first semiconductor processing chamber to a second processing region of a second semiconductor processing chamber. The methods may include providing one or more deposition precursors to the second processing region. The methods may include contacting the substrate with the one or more deposition precursors. The contacting may deposit a layer of dielectric material on the substrate.